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公开(公告)号:US20130277649A1
公开(公告)日:2013-10-24
申请号:US13846607
申请日:2013-03-18
Applicant: CAMBRIDGE DISPLAY TECHNOLOGY LIMITED
Inventor: Haydn Gregory , Julian Carter
CPC classification number: H01L51/5253 , H01L27/3246 , H01L27/3283 , H01L51/0005 , H01L51/0012 , H01L51/0037 , H01L51/56
Abstract: An organic electronic device structure, the structure comprising: a substrate; a base layer supported by said substrate and defining the base of a well for solvent-based deposition of organic electronic material; one or more spacer layers formed over said base layer; a bank layer formed over said spacer layer to define a side of said well; and wherein an edge of said well adjacent said base layer is undercut to define a shelf over said base layer, said shelf defining a recess to receive said organic electronic material.
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2.
公开(公告)号:US08836214B2
公开(公告)日:2014-09-16
申请号:US13846607
申请日:2013-03-18
Applicant: Cambridge Display Technology Limited
Inventor: Haydn Gregory , Julian Carter
CPC classification number: H01L51/5253 , H01L27/3246 , H01L27/3283 , H01L51/0005 , H01L51/0012 , H01L51/0037 , H01L51/56
Abstract: An organic electronic device structure, the structure comprising: a substrate; a base layer supported by said substrate and defining the base of a well for solvent-based deposition of organic electronic material; one or more spacer layers formed over said base layer; a bank layer formed over said spacer layer to define a side of said well; and wherein an edge of said well adjacent said base layer is undercut to define a shelf over said base layer, said shelf defining a recess to receive said organic electronic material.
Abstract translation: 一种有机电子器件结构,所述结构包括:衬底; 由所述衬底支撑并限定用于有机电子材料的基于溶剂的沉积的阱的基底的基底层; 形成在所述基底层上的一个或多个间隔层; 形成在所述间隔层上方以限定所述阱的一侧的堤层; 并且其中邻近所述基底层的所述孔的边缘被底切以在所述基底层上限定一个搁架,所述搁架限定用于接纳所述有机电子材料的凹部。
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