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Patent Agency Ranking
公开(公告)号：US20130277649A1
公开(公告)日：2013-10-24
申请号：US13846607
申请日：2013-03-18
Applicant: CAMBRIDGE DISPLAY TECHNOLOGY LIMITED
Inventor： Haydn Gregory , Julian Carter
CPC classification number: H01L51/5253 , H01L27/3246 , H01L27/3283 , H01L51/0005 , H01L51/0012 , H01L51/0037 , H01L51/56
Abstract: An organic electronic device structure, the structure comprising: a substrate; a base layer supported by said substrate and defining the base of a well for solvent-based deposition of organic electronic material; one or more spacer layers formed over said base layer; a bank layer formed over said spacer layer to define a side of said well; and wherein an edge of said well adjacent said base layer is undercut to define a shelf over said base layer, said shelf defining a recess to receive said organic electronic material.
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公开(公告)号：US09461262B2
公开(公告)日：2016-10-04
申请号：US14385486
申请日：2013-03-13
Applicant: CAMBRIDGE DISPLAY TECHNOLOGY LIMITED
Inventor： Surama Malik , Julian Carter , Laurence Scullion , Colin Baker , Arne Fleissner , Jeremy Burroughes
CPC classification number: H01L51/5088 , H01L51/0035 , H01L51/0037 , H01L51/0038 , H01L51/0039 , H01L51/441 , H01L51/445 , H01L51/5212 , H01L51/5275 , H01L51/56 , H01L2251/5361 , Y02E10/549
Abstract: This invention generally relates to an optoelectronic device and a method of fabricating such a device, and more particularly to an optoelectronic device comprising an anode layer, a semiconductive layer provided over the anode layer, and a cathode layer provided over the semiconductive layer, the anode layer comprising a plurality of electrically conductive tracks connected together and spaced apart from one another with gaps therebetween, the device further comprising a first and one or more further hole injection layers provided between the anode layer and the semiconductive layer and extending across said gaps, wherein the first hole injection layer has a conductivity greater than the conductivity of the one or more further hole injection layers.
Abstract translation: 本发明一般涉及一种制造这种器件的光电子器件及其制造方法，尤其涉及一种包括阳极层，设在阳极层上的半导体层和设置在半导体层上的阴极层的光电器件，阳极 层包括连接在一起并且彼此间隔开的多个导电轨道，该装置还包括设置在阳极层和半导体层之间并延伸穿过所述间隙的第一和一个或多个另外的空穴注入层，其中 第一空穴注入层的导电率大于一个或多个其它空穴注入层的导电率。
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公开(公告)号：US20140353647A1
公开(公告)日：2014-12-04
申请号：US14356132
申请日：2012-10-29
Applicant: CAMBRIDGE DISPLAY TECHNOLOGY LIMITED
Inventor： Christopher Newsome , Julian Carter
CPC classification number: H01L51/0558 , B82Y10/00 , H01L51/0003 , H01L51/0021 , H01L51/0026 , H01L51/0035 , H01L51/0039 , H01L51/0047 , H01L51/0052 , H01L51/0059 , H01L51/0512 , H01L51/0562 , H01L51/105 , H01L51/5056 , H01L51/5088
Abstract: An organic thin film transistor comprises source and drain electrodes defining a channel between them; a surface-modification layer on at least part of the surface of each of the source and drain electrodes; an organic semiconductor layer extending across the channel and in contact with the surface-modification layers; a gate electrode; and a gate dielectric between the organic semiconductor layer and the gate dielectric. The surface-modification layers consist essentially of a partially fluorinated fullerene.
Abstract translation: 有机薄膜晶体管包括在它们之间限定通道的源极和漏极; 在每个源极和漏极的表面的至少一部分上的表面改性层; 延伸穿过通道并与表面改性层接触的有机半导体层; 栅电极; 以及在有机半导体层和栅极电介质之间的栅极电介质。 表面改性层基本上由部分氟化的富勒烯组成。
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公开(公告)号：US20150041787A1
公开(公告)日：2015-02-12
申请号：US14385486
申请日：2013-03-13
Applicant: CAMBRIDGE DISPLAY TECHNOLOGY LIMITED
Inventor： Surama Malik , Julian Carter , Laurence Scullion , Colin Baker , Arne Fleissner , Jeremy Burroughes
CPC classification number: H01L51/5088 , H01L51/0035 , H01L51/0037 , H01L51/0038 , H01L51/0039 , H01L51/441 , H01L51/445 , H01L51/5212 , H01L51/5275 , H01L51/56 , H01L2251/5361 , Y02E10/549
Abstract: This invention generally relates to an optoelectronic device and a method of fabricating such a device, and more particularly to an optoelectronic device comprising an anode layer, a semiconductive layer provided over the anode layer, and a cathode layer provided over the semiconductive layer, the anode layer comprising a plurality of electrically conductive tracks connected together and spaced apart from one another with gaps therebetween, the device further comprising a first and one or more further hole injection layers provided between the anode layer and the semiconductive layer and extending across said gaps, wherein the first hole injection layer has a conductivity greater than the conductivity of the one or more further hole injection layers.
Abstract translation: 本发明一般涉及一种制造这种器件的光电子器件及其制造方法，尤其涉及一种包括阳极层，设在阳极层上的半导体层和设置在半导体层上的阴极层的光电器件，阳极 层包括连接在一起并且彼此间隔开的多个导电轨道，该装置还包括设置在阳极层和半导体层之间并延伸穿过所述间隙的第一和一个或多个另外的空穴注入层，其中 第一空穴注入层的导电率大于一个或多个其它空穴注入层的导电率。
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公开(公告)号：US08836214B2
公开(公告)日：2014-09-16
申请号：US13846607
申请日：2013-03-18
Applicant: Cambridge Display Technology Limited
Inventor： Haydn Gregory , Julian Carter
CPC classification number: H01L51/5253 , H01L27/3246 , H01L27/3283 , H01L51/0005 , H01L51/0012 , H01L51/0037 , H01L51/56
Abstract: An organic electronic device structure, the structure comprising: a substrate; a base layer supported by said substrate and defining the base of a well for solvent-based deposition of organic electronic material; one or more spacer layers formed over said base layer; a bank layer formed over said spacer layer to define a side of said well; and wherein an edge of said well adjacent said base layer is undercut to define a shelf over said base layer, said shelf defining a recess to receive said organic electronic material.
Abstract translation: 一种有机电子器件结构，所述结构包括：衬底; 由所述衬底支撑并限定用于有机电子材料的基于溶剂的沉积的阱的基底的基底层; 形成在所述基底层上的一个或多个间隔层; 形成在所述间隔层上方以限定所述阱的一侧的堤层; 并且其中邻近所述基底层的所述孔的边缘被底切以在所述基底层上限定一个搁架，所述搁架限定用于接纳所述有机电子材料的凹部。
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