公开(公告)号：US20150101927A1

公开(公告)日：2015-04-16

申请号：US14575244

申请日：2014-12-18

Applicant: CANON ANELVA CORPORATION

Inventor： Nobuo YAMAGUCHI ,  Koji TSUNEKAWA ,  Naoki WATANABE ,  Motomu KOSUDA

IPC: C23C14/34

CPC classification number: C23C14/3492 ,  C23C14/225 ,  C23C14/3407 ,  C23C14/54

Abstract: Disclosed is a sputtering apparatus having a target (2) disposed offset with respect to a substrate (7), wherein the uniformity of a deposition amount can be ensured even when a substrate support holder (6) has a low number of rotations of several rotations to several tens of rotations and the amount of deposition is extremely small to provide such a film thickness of 1 nm or less.A control unit (11) is provided to control a rotational velocity V (rps) of the substrate support holder (6) to satisfy: V·T=N+α by inputting the value of a deposition time T and the values of a total whole number of rotations N and a fractional number of rotations α which are expressed as: X=N+α (where, N is the total whole number of rotations which is a positive whole number, and α is the fractional number of rotations which is a positive pure decimal) when the total number of rotations of the substrate support holder (6) is X during the deposition time T (seconds) of sputtering particles onto a film forming surface of the substrate (7).

Abstract translation: 公开了一种溅射装置，其具有相对于基板（7）偏移设置的靶（2），其中即使当基板支撑架（6）具有几个旋转的低转数时也可以确保沉积量的均匀性 几十旋转，并且沉积量非常小以提供1nm或更小的膜厚度。 控制单元（11）被设置为通过输入沉积时间T的值和总计值来控制基板支撑保持器（6）的旋转速度V（rps）以满足：V·T = N +α 总转数N和分数转数α表示为：X = N +α（其中，N是总整数的总转数，α是转数的分数， 在溅射粒子到基板（7）的成膜表面的沉积时间T（秒）期间，当基板支撑保持器（6）的总转数为X时，为正纯的十进制。