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    TUNNEL MAGNETO-RESISTANCE ELEMENT MANUFACTURING APPARATUS
    3.
    发明申请
    TUNNEL MAGNETO-RESISTANCE ELEMENT MANUFACTURING APPARATUS 审中-公开
    隧道磁阻元件制造设备

    公开(公告)号：US20140353149A1

    公开(公告)日：2014-12-04

    申请号：US14462860

    申请日：2014-08-19

    Applicant: CANON ANELVA CORPORATION

    Inventor： Takuya SEINO ,  Kazumasa NISHIMURA ,  Koji TSUNEKAWA ,  Eisaku WATANABE ,  Shigeo KANEKO

    IPC: H01L21/67

    CPC classification number: H01L21/67184 ,  H01L21/67173 ,  H01L43/12

    Abstract: The present invention provides a TMR element manufacturing apparatus capable of reducing contamination of impurities in magnetic films. According to an embodiment of the present invention, a tunnel magneto-resistance element manufacturing apparatus includes: a load lock device to load and unload a substrate from and to an outside; a first substrate transfer device that is connected to the load lock device, at least one substrate process device being connected to the first substrate transfer device; a first evacuation unit provided in the first substrate transfer device; a second substrate transfer device that is connected to the first substrate transfer device, multiple substrate process devices being connected to the second substrate transfer device; and a second evacuation unit provided in the second substrate transfer device. At least one of the multiple substrate process devices connected to the second substrate transfer device is an oxidation device.

    Abstract translation: 本发明提供能够减少磁性膜中的杂质污染的TMR元件制造装置。 根据本发明的实施例，隧道磁阻元件制造装置包括：负载锁定装置，用于从外部加载和卸载基板; 连接到所述负载锁定装置的第一衬底传送装置，连接到所述第一衬底传送装置的至少一个衬底处理装置; 设置在所述第一基板输送装置中的第一排气单元; 连接到第一衬底传送装置的第二衬底传送装置，连接到第二衬底传送装置的多个衬底处理装置; 以及设置在第二基板输送装置中的第二排出单元。 连接到第二衬底转移装置的多个衬底工艺装置中的至少一个是氧化装置。

    SPUTTERING APPARATUS AND SPUTTERING METHOD
    4.
    发明申请
    SPUTTERING APPARATUS AND SPUTTERING METHOD 有权
    溅射装置和喷射方法

    公开(公告)号：US20150096881A1

    公开(公告)日：2015-04-09

    申请号：US14570473

    申请日：2014-12-15

    Applicant: CANON ANELVA CORPORATION

    Inventor： Koji TSUNEKAWA

    IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35

    CPC classification number: H01J37/3435 ,  C23C14/225 ,  C23C14/34 ,  C23C14/3407 ,  C23C14/35 ,  C23C14/505 ,  H01J37/3405 ,  H01J37/3417

    Abstract: An objective of the present invention is to provide a sputtering apparatus capable of obtaining an adequate film thickness distribution on a substrate surface even if a target projection plane is kept from being projected on the substrate. A sputtering apparatus includes: a process chamber; a substrate holder being rotatable in an in-plane direction of the substrate while holding the substrate; and a sputtering cathode located obliquely to the substrate holder, and arranged to incline to the substrate holder. A projection plane of a target holding surface of the sputtering cathode projected in a direction along a center normal line to the target holding surface onto a plane containing a substrate mounting surface of the substrate holder is formed outside the substrate mounting surface of the substrate holder, and the center normal line to the substrate mounting surface and the center normal line to the sputtering cathode are not coplanar.

    Abstract translation: 本发明的目的是提供一种能够在基板表面上获得足够的膜厚度分布的溅射装置，即使目标投影平面不被投射在基板上。 溅射装置包括：处理室; 基板保持件，可在保持基板的同时在基板的面内方向上旋转; 以及溅射阴极，其倾斜于所述衬底保持器，并且布置成向衬底保持器倾斜。 溅射阴极的靶保持面的投影面在基板支架的基板安装面的外侧形成在沿着与靶保持面的中心法线方向投影到包含基板保持件的基板安装面的平面上的投影面， 并且到衬底安装表面的中心法线与溅射阴极的中心法线不共面。

    METHOD OF FABRICATING AND APPARATUS OF FABRICATING TUNNEL MAGNETIC RESISTIVE ELEMENT
    6.
    发明申请
    METHOD OF FABRICATING AND APPARATUS OF FABRICATING TUNNEL MAGNETIC RESISTIVE ELEMENT 审中-公开
    制造隧道电磁元件的制造方法

    公开(公告)号：US20130134032A1

    公开(公告)日：2013-05-30

    申请号：US13728448

    申请日：2012-12-27

    Applicant: CANON ANELVA CORPORATION

    Inventor： Koji TSUNEKAWA ,  Yoshinori NAGAMINE ,  Kazumasa NISHIMURA ,  Franck ERNULT

    IPC: G11B5/39

    CPC classification number: G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/081 ,  C23C14/34 ,  C23C14/3492 ,  C23C14/568 ,  C23C14/5853 ,  G01R33/09 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3909 ,  H01F41/18 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12

    Abstract: One embodiment of the present invention is a method of fabricating a tunnel magnetic resistive element including a first ferromagnetic layer, a tunnel barrier layer and a second ferromagnetic layer, comprising a step of making the tunnel barrier layer, comprising the step of making the tunnel barrier layer includes the steps of: forming a first layer on the first ferromagnetic layer by applying DC power to a metal target and introducing sputtering gas without introducing oxygen gas in a sputtering chamber; and forming a second layer on the first layer by applying DC power to the metal target and introducing the sputtering gas and oxygen gas with the DC power to be applied to the metal target from the step of forming the first layer in the sputtering chamber, wherein the second layer is oxygen-doped.

    Abstract translation: 本发明的一个实施例是制造包括第一铁磁层，隧道势垒层和第二铁磁层的隧道磁阻元件的方法，包括制造隧道势垒层的步骤，包括使隧道势垒 层包括以下步骤：通过向金属靶施加直流电力并在溅射室中引入氧气而引入溅射气体，在第一铁磁层上形成第一层; 以及在所述溅射室中形成所述第一层的步骤，通过向所述金属靶施加直流电力并将所述溅射气体和氧气与所述施加到所述金属靶的直流电力引入所述第一层，形成第二层，其中， 第二层是氧掺杂的。

    SPUTTERING APPARATUS, FILM DEPOSITION METHOD, AND CONTROL DEVICE
    7.
    发明申请
    SPUTTERING APPARATUS, FILM DEPOSITION METHOD, AND CONTROL DEVICE 审中-公开
    溅射装置，膜沉积方法和控制装置

    公开(公告)号：US20130105298A1

    公开(公告)日：2013-05-02

    申请号：US13710696

    申请日：2012-12-11

    Applicant: Canon Anelva Corporation

    Inventor： Koji TSUNEKAWA ,  Masahiro SUENAGA ,  Takeo KONNO

    IPC: C23C14/54

    CPC classification number: H01J37/3476 ,  C23C14/3464 ,  C23C14/505 ,  C23C14/54 ,  C23C14/542 ,  G11B5/3906 ,  G11B5/3909 ,  H01J37/32733 ,  H01J37/34 ,  H01J37/3429 ,  H01J37/3435 ,  H01J37/3473 ,  H01J2237/20214 ,  H01J2237/24578 ,  H01J2237/332

    Abstract: A sputtering apparatus according to one embodiment of the present invention includes a substrate holder, a cathode unit arranged at a position diagonally opposite to the substrate holder, a position sensor for detecting a rotational position of the substrate, and a holder rotation controller for adjusting a rotation speed of the substrate according to the detected rotational position. The holder rotation controller controls the rotation speed so that the rotation speed of the substrate when the cathode unit is located on a side in a first direction as an extending direction of a process target surface of the relief structure is lower than the rotation speed of the substrate when the cathode unit is located on a side in a second direction which is perpendicular to the first direction along the rotation of the substrate.

    Abstract translation: 根据本发明的一个实施例的溅射装置包括：衬底保持器，布置在与衬底保持器对角相对的位置处的阴极单元，用于检测衬底的旋转位置的位置传感器，以及用于调整衬底保持器的保持器旋转控制器 根据检测到的旋转位置的基板的旋转速度。 保持器旋转控制器控制旋转速度，使得当阴极单元位于第一方向的一侧时的基板的旋转速度作为浮雕结构的处理目标表面的延伸方向低于旋转速度 衬底，当阴极单元位于沿着衬底的旋转垂直于第一方向的第二方向的一侧上时。

    PLASMA TREATMENT APPARATUS AND SUBSTRATE TREATMENT SYSTEM
    9.
    发明申请
    PLASMA TREATMENT APPARATUS AND SUBSTRATE TREATMENT SYSTEM 审中-公开
    等离子体处理设备和基板处理系统

    公开(公告)号：US20150107516A1

    公开(公告)日：2015-04-23

    申请号：US14501300

    申请日：2014-09-30

    Applicant: CANON ANELVA CORPORATION

    Inventor： Koji TSUNEKAWA ,  Yoshinori NAGAMINE ,  Daisuke NAKAJIMA

    IPC: H01J37/32

    CPC classification number: H01J37/32899 ,  H01J37/32458 ,  H01J37/32651 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/3405 ,  H01L21/67126 ,  H01L21/67161 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67742 ,  H01L21/67748

    Abstract: In a substrate treatment system including multiple treatment chambers around a substrate transfer chamber, an increase in apparatus floor area due to installation of additional treatment chambers is reduced. A plasma treatment apparatus according to one embodiment of the present invention includes: a treatment chamber; a substrate holder for holding the substrate; plasma generation unit for forming plasma; multiple gate valves for installation and removal of the substrate; a shield for surrounding the plasma formed by the plasma generation unit; and substrate transfer unit for transferring the substrate through the gate valves. The substrate transfer unit is shielded from the plasma by the shield.

    Abstract translation: 在包括在基板传送室周围的多个处理室的基板处理系统中，减少了由于安装附加的处理室而导致的设备底板面积的增加。 根据本发明的一个实施例的等离子体处理装置包括：处理室; 用于保持基板的基板保持器; 用于形成等离子体的等离子体发生单元; 用于安装和移除基板的多个闸阀; 用于围绕由等离子体产生单元形成的等离子体的屏蔽; 以及用于通过闸阀传送衬底的衬底转移单元。 衬底转印单元通过屏蔽件与等离子体屏蔽。

    SPUTTERING APPARATUS AND RECORDING MEDIUM FOR RECORDING CONTROL PROGRAM THEREOF
    10.
    发明申请
    SPUTTERING APPARATUS AND RECORDING MEDIUM FOR RECORDING CONTROL PROGRAM THEREOF 审中-公开
    用于记录控制程序的溅射装置和记录介质

    公开(公告)号：US20150101927A1

    公开(公告)日：2015-04-16

    申请号：US14575244

    申请日：2014-12-18

    Applicant: CANON ANELVA CORPORATION

    Inventor： Nobuo YAMAGUCHI ,  Koji TSUNEKAWA ,  Naoki WATANABE ,  Motomu KOSUDA

    IPC: C23C14/34

    CPC classification number: C23C14/3492 ,  C23C14/225 ,  C23C14/3407 ,  C23C14/54

    Abstract: Disclosed is a sputtering apparatus having a target (2) disposed offset with respect to a substrate (7), wherein the uniformity of a deposition amount can be ensured even when a substrate support holder (6) has a low number of rotations of several rotations to several tens of rotations and the amount of deposition is extremely small to provide such a film thickness of 1 nm or less.A control unit (11) is provided to control a rotational velocity V (rps) of the substrate support holder (6) to satisfy: V·T=N+α by inputting the value of a deposition time T and the values of a total whole number of rotations N and a fractional number of rotations α which are expressed as: X=N+α (where, N is the total whole number of rotations which is a positive whole number, and α is the fractional number of rotations which is a positive pure decimal) when the total number of rotations of the substrate support holder (6) is X during the deposition time T (seconds) of sputtering particles onto a film forming surface of the substrate (7).

    Abstract translation: 公开了一种溅射装置，其具有相对于基板（7）偏移设置的靶（2），其中即使当基板支撑架（6）具有几个旋转的低转数时也可以确保沉积量的均匀性 几十旋转，并且沉积量非常小以提供1nm或更小的膜厚度。 控制单元（11）被设置为通过输入沉积时间T的值和总计值来控制基板支撑保持器（6）的旋转速度V（rps）以满足：V·T = N +α 总转数N和分数转数α表示为：X = N +α（其中，N是总整数的总转数，α是转数的分数， 在溅射粒子到基板（7）的成膜表面的沉积时间T（秒）期间，当基板支撑保持器（6）的总转数为X时，为正纯的十进制。

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