公开(公告)号：US20210265411A1

公开(公告)日：2021-08-26

申请号：US17176959

申请日：2021-02-16

申请人： CANON KABUSHIKI KAISHA

发明人： Junya Tamaki ,  Takafumi Miki ,  Ryo Yoshida ,  Atsushi Kanome ,  Kosuke Asano ,  Takehiro Toyoda ,  Masaki Masaki

IPC分类号： H01L27/146

摘要： A semiconductor device includes a plurality of wirings each having a damascene structure on a semiconductor layer, wherein the plurality of wirings includes a first wiring and a second wiring adjacent to each other, wherein the first wiring includes, along a direction in which the first wiring extends, a first portion, a second portion, and a third portion located between the first portion and the second portion, and wherein a width of the third portion is larger than each of a width of the first portion and a width of the second portion.

公开(公告)号：US11332409B2

公开(公告)日：2022-05-17

申请号：US16694383

申请日：2019-11-25

申请人： CANON KABUSHIKI KAISHA

发明人： Yoshihisa Kawamura ,  Hideki Ina ,  Ryo Yoshida ,  Yukinobu Suzuki ,  Koji Hara ,  Yoshiyuki Nakagawa

IPC分类号： H01L27/146 ,  C04B35/584

摘要： A curved surface constituting a convex surface or a concave surface of each of a plurality of lenses includes at least a silicon nitride layer and another silicon nitride layer. An interlayer having a composition different from a composition of the silicon nitride layer and a composition of the other silicon nitride layer is arranged between the silicon nitride layer and the other silicon nitride layer, and a thickness of the interlayer is less than a thickness of the silicon nitride layer and a thickness of the other silicon nitride layer.

公开(公告)号：US20200172443A1

公开(公告)日：2020-06-04

申请号：US16694383

申请日：2019-11-25

申请人： CANON KABUSHIKI KAISHA

发明人： Yoshihisa Kawamura ,  Hideki Ina ,  Ryo Yoshida ,  Yukinobu Suzuki ,  Koji Hara ,  Yoshiyuki Nakagawa

IPC分类号： C04B35/584 ,  H01L27/146

摘要： A curved surface constituting a convex surface or a concave surface of each of a plurality of lenses includes at least a silicon nitride layer and another silicon nitride layer. An interlayer having a composition different from a composition of the silicon nitride layer and a composition of the other silicon nitride layer is arranged between the silicon nitride layer and the other silicon nitride layer, and a thickness of the interlayer is less than a thickness of the silicon nitride layer and a thickness of the other silicon nitride layer.