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公开(公告)号：US20200286943A1
公开(公告)日：2020-09-10
申请号：US16803791
申请日：2020-02-27
发明人： Tsutomu Tange , Takumi Ogino , Hiroaki Kobayashi
IPC分类号： H01L27/146 , H01L23/00
摘要： A first conductive portion includes a first pad surrounded by a first insulator film in a plane perpendicular to a first direction, and a first via connected to the first pad so that the first via is positioned between the first pad and a first semiconductor layer in the first direction. A second conductive portion includes a second pad surrounded by a second insulator film in a plane perpendicular to the first direction, and a second via connected to the second pad so that the second via is positioned between the second pad and a second semiconductor layer in the first direction. The first and the second conductive portions are different in dimension.
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公开(公告)号：US11682686B2
公开(公告)日：2023-06-20
申请号：US17558814
申请日：2021-12-22
发明人： Toshiyuki Ogawa , Sho Suzuki , Takehito Okabe , Mitsuhiro Yomori , Yukinobu Suzuki , Akihiro Kawano , Tsutomu Tange
IPC分类号： H01L27/146 , H04N5/369 , H04N25/70
CPC分类号： H01L27/14623 , H01L27/14627 , H01L27/14685 , H04N25/70 , H01L27/1464 , H01L27/1469 , H01L27/14634
摘要： Photoelectric conversion apparatus includes semiconductor layer in which first photoelectric converters are arranged in light-receiving region and second photoelectric converters are arranged in light-shielded region, light-shielding wall arranged above the semiconductor layer and defining apertures respectively corresponding to the first photoelectric converters, and light-shielding film arranged above the semiconductor layer. The light-shielding film includes first portion extending along principal surface of the semiconductor layer to cover the second photoelectric converters. The first portion has lower surface and upper surface. The light-shielding wall includes second portion whose distance from the semiconductor layer is larger than distance between the upper surface and the principal surface. Thickness of the first portion in direction perpendicular to the principal surface is larger than thickness of the second portion in direction parallel to the principal surface.
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公开(公告)号：US11244978B2
公开(公告)日：2022-02-08
申请号：US16600753
申请日：2019-10-14
发明人： Toshiyuki Ogawa , Sho Suzuki , Takehito Okabe , Mitsuhiro Yomori , Yukinobu Suzuki , Akihiro Kawano , Tsutomu Tange
IPC分类号： H01L27/146 , H04N5/369
摘要： Photoelectric conversion apparatus includes semiconductor layer in which first photoelectric converters are arranged in light-receiving region and second photoelectric converters are arranged in light-shielded region, light-shielding wall arranged above the semiconductor layer and defining apertures respectively corresponding to the first photoelectric converters, and light-shielding film arranged above the semiconductor layer. The light-shielding film includes first portion extending along principal surface of the semiconductor layer to cover the second photoelectric converters. The first portion has lower surface and upper surface. The light-shielding wall includes second portion whose distance from the semiconductor layer is larger than distance between the upper surface and the principal surface. Thickness of the first portion in direction perpendicular to the principal surface is larger than thickness of the second portion in direction parallel to the principal surface.
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公开(公告)号：US11195870B2
公开(公告)日：2021-12-07
申请号：US16803791
申请日：2020-02-27
发明人： Tsutomu Tange , Takumi Ogino , Hiroaki Kobayashi
IPC分类号： H01L27/146 , H01L23/00
摘要： A first conductive portion includes a first pad surrounded by a first insulator film in a plane perpendicular to a first direction, and a first via connected to the first pad so that the first via is positioned between the first pad and a first semiconductor layer in the first direction. A second conductive portion includes a second pad surrounded by a second insulator film in a plane perpendicular to the first direction, and a second via connected to the second pad so that the second via is positioned between the second pad and a second semiconductor layer in the first direction. The first and the second conductive portions are different in dimension.
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公开(公告)号：US10777596B2
公开(公告)日：2020-09-15
申请号：US16137861
申请日：2018-09-21
IPC分类号： H01L27/146 , H01L31/103 , H01L29/423 , H01L29/51 , H01L29/778 , H01L29/20 , H01L29/66 , H01L29/78
摘要： An imaging apparatus includes a substrate including a photoelectric conversion portion; and a silicon nitride layer arranged to cover at least a portion of the photoelectric conversion portion. The silicon nitride layer contains chlorine. An N/Si composition ratio in the silicon nitride layer is not less than 1.00 and is less than 1.33.
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公开(公告)号：US11605665B2
公开(公告)日：2023-03-14
申请号：US17076678
申请日：2020-10-21
发明人： Katsunori Hirota , Tsutomu Tange , Takuya Hara
IPC分类号： H01L27/146
摘要： A semiconductor apparatus includes a semiconductor layer that includes a photoelectric conversion unit disposed between a front surface and a back surface and a transistor disposed at the front surface, and a dielectric film in contact with the back surface, wherein the semiconductor layer includes a region extending 100 nm from the back surface, the region having boron concentrations whose maximum value is more than 1×1020 [atoms/cm3].
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公开(公告)号：US20220115429A1
公开(公告)日：2022-04-14
申请号：US17558814
申请日：2021-12-22
发明人： Toshiyuki Ogawa , Sho Suzuki , Takehito Okabe , Mitsuhiro Yomori , Yukinobu Suzuki , Akihiro Kawano , Tsutomu Tange
IPC分类号： H01L27/146 , H04N5/369
摘要： Photoelectric conversion apparatus includes semiconductor layer in which first photoelectric converters are arranged in light-receiving region and second photoelectric converters are arranged in light-shielded region, light-shielding wall arranged above the semiconductor layer and defining apertures respectively corresponding to the first photoelectric converters, and light-shielding film arranged above the semiconductor layer. The light-shielding film includes first portion extending along principal surface of the semiconductor layer to cover the second photoelectric converters. The first portion has lower surface and upper surface. The light-shielding wall includes second portion whose distance from the semiconductor layer is larger than distance between the upper surface and the principal surface. Thickness of the first portion in direction perpendicular to the principal surface is larger than thickness of the second portion in direction parallel to the principal surface.
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公开(公告)号：US11101312B2
公开(公告)日：2021-08-24
申请号：US16749221
申请日：2020-01-22
IPC分类号： H01L27/146 , H01L23/00 , H01L23/522
摘要： A semiconductor apparatus comprising: a first semiconductor component including a first semiconductor layer and a first insulation film; and a second semiconductor component including a second semiconductor layer and a second insulation film, wherein the first semiconductor component and the second semiconductor component are bonded to each other by each of a plurality of first electric conductor portions provided in the first insulation film and each of a plurality of second electric conductor portions provided in the second insulation film, each of the plurality of first electric conductor portions is constituted by one pad surrounded by the first insulation film and N vias bonded to the one pad so as to be positioned between the one pad and the first semiconductor layer, and a volume VTR of the one pad and a total volume VTH of the N vias satisfy VTR/VTH≥N.
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公开(公告)号：US20210126026A1
公开(公告)日：2021-04-29
申请号：US17076678
申请日：2020-10-21
发明人： Katsunori Hirota , Tsutomu Tange , Takuya Hara
IPC分类号： H01L27/146
摘要： A semiconductor apparatus includes a semiconductor layer that includes a photoelectric conversion unit disposed between a front surface and a back surface and a transistor disposed at the front surface, and a dielectric film in contact with the back surface, wherein the semiconductor layer includes a region extending 100 nm from the back surface, the region having boron concentrations whose maximum value is more than 1×1020 [atoms/cm3].
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公开(公告)号：US10991741B2
公开(公告)日：2021-04-27
申请号：US16556964
申请日：2019-08-30
发明人： Yoshiei Tanaka , Katsunori Hirota , Yusuke Onuki , Tsutomu Tange , Takumi Ogino
IPC分类号： H01L27/146
摘要： A silicon compound film that is any one of a silicon oxide film, a silicon nitride film, and a silicon carbide film, and a metal compound film lying between the silicon compound film and a semiconductor layer are arranged above a main face. The silicon compound film and the metal compound film extend into a first trench, and the metal compound film extends into a second trench. When a distance from the bottom of the second trench to the silicon compound film is expressed as “Hb”, and a distance from the main face to the silicon compound film is expressed as “Hd”, the respective distances satisfy the condition “Hd
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