公开(公告)号：US12096642B2

公开(公告)日：2024-09-17

申请号：US17519340

申请日：2021-11-04

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Atsushi Toda

IPC分类号： H01L27/30 ,  H01L27/14 ,  H01L27/146 ,  H04N5/374 ,  H04N25/13 ,  H04N25/17 ,  H04N25/70 ,  H04N25/702 ,  H04N25/76 ,  H10K19/20 ,  H10K39/32

CPC分类号： H10K39/32 ,  H01L27/14 ,  H01L27/146 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14665 ,  H04N25/134 ,  H04N25/136 ,  H04N25/17 ,  H04N25/70 ,  H04N25/702 ,  H04N25/76 ,  H10K19/20 ,  H01L27/14647 ,  H04N25/13

摘要： The present disclosure relates to a solid-state imaging device that can achieve a high S/N ratio at a high sensitivity level without any decrease in resolution, and to an electronic apparatus. In the upper layer, the respective pixels of a photoelectric conversion unit that absorbs light of a first wavelength are tilted at approximately 45 degrees with respect to a square pixel array, and are two-dimensionally arranged in horizontal directions and vertical directions in an oblique array. The respective pixels of a photoelectric conversion unit that is sensitive to light of a second or third wavelength are arranged under the first photoelectric conversion unit. That is, pixels that are √{square root over (2)} times as large in size (twice as large in area) and are rotated 45 degrees are arranged in an oblique array. The present disclosure can be applied to solid-state imaging devices that are used in imaging apparatuses, for example.

公开(公告)号：US12088780B2

公开(公告)日：2024-09-10

申请号：US18346390

申请日：2023-07-03

申请人： Sony Semiconductor Solutions Corporation

发明人： Tomohiro Yamazaki

IPC分类号： H04N5/335 ,  H01L27/146 ,  H04N13/218 ,  H04N13/239 ,  H04N13/257 ,  H04N25/13 ,  H04N25/70 ,  H04N25/702

CPC分类号： H04N13/239 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H04N13/218 ,  H04N13/257 ,  H04N25/134 ,  H04N25/70 ,  H04N25/702

摘要： An imaging apparatus including (A) an imaging lens; and (B) an image sensor array in which a plurality of image sensor units are arrayed, wherein, a single image sensor unit includes a single microlens and a plurality of image sensors light passing through the imaging lens and reaching each image sensor unit passes through the microlens and forms an image on the plurality of image sensors constituting the image sensor unit, an inter-unit light shielding layer is formed between the image sensor units themselves, and a light shielding layer is not formed between the image sensor units which constitute the image sensor unit.

公开(公告)号：US12035060B2

公开(公告)日：2024-07-09

申请号：US17520466

申请日：2021-11-05

申请人： OmniVision Technologies, Inc.

发明人： Zhiyong Zhan ,  Yin Qian

IPC分类号： H04N25/70 ,  G03B17/55 ,  H01L27/146 ,  H04N23/52 ,  H04N23/54 ,  H04N23/57 ,  H04N25/709 ,  H04N25/79 ,  H05K1/02 ,  H05K7/20

CPC分类号： H04N25/70 ,  G03B17/55 ,  H01L27/14601 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/1469 ,  H04N23/52 ,  H04N23/54 ,  H04N23/57 ,  H04N25/709 ,  H04N25/79 ,  H05K1/0203 ,  H05K1/0206 ,  H05K7/2039 ,  H05K2201/10121

摘要： A stacked image sensor includes a signal-processing circuitry layer, a pixel-array substrate, a heat-transport layer, and a thermal via. The signal-processing circuitry layer includes a conductive pad exposed on a circuitry-layer bottom surface of the signal-processing circuitry layer. The pixel-array substrate includes a pixel array and is disposed on a circuitry-layer top surface of the signal-processing circuitry layer. The circuitry-layer top surface is between the circuitry-layer bottom surface and the pixel-array substrate. The heat-transport layer is located between the signal-processing circuitry layer and the pixel-array substrate. The thermal via thermally couples the heat-transport layer to the conductive pad.

公开(公告)号：US11978748B2

公开(公告)日：2024-05-07

申请号：US17078670

申请日：2020-10-23

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Seokho Yun ,  Sookyoung Roh

IPC分类号： H01L27/146 ,  G02B3/00 ,  G02B5/18 ,  H04N25/70

CPC分类号： H01L27/14621 ,  G02B3/0056 ,  G02B5/1876 ,  H01L27/14607 ,  H01L27/14627 ,  H04N25/70 ,  H01L27/1462

摘要： Provided is an image sensor including a sensor substrate including a first photo-sensing cell and a second photo-sensing cell configured to sense light, a spacer layer that is transparent and disposed on the sensor substrate, and a color separating lens array disposed on the spacer layer and including a first region disposed opposite to the first photo-sensing cell in a vertical direction and having a first pattern, and a second region disposed opposite to the second photo-sensing cell in the vertical direction and having a second pattern that is different from the first pattern, and wherein the first pattern is configured to separate, from incident light, a first wavelength light and condense the first wavelength light to the first photo-sensing cell, and the second pattern is configured to separate, from the incident light, a second wavelength light and condense the second wavelength light to the second photo-sensing cell.

公开(公告)号：US11923395B2

公开(公告)日：2024-03-05

申请号：US17319860

申请日：2021-05-13

申请人： SONY GROUP CORPORATION

发明人： Yoshiaki Masuda ,  Minoru Ishida

IPC分类号： H01L27/146 ,  H01L21/768 ,  H01L23/498 ,  H01L23/532 ,  H04N23/54 ,  H04N25/70

CPC分类号： H01L27/14634 ,  H01L21/76898 ,  H01L23/49816 ,  H01L23/53233 ,  H01L23/53242 ,  H01L23/53257 ,  H01L27/14618 ,  H01L27/14636 ,  H01L27/1469 ,  H04N23/54 ,  H04N25/70 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/48091 ,  H01L2924/00014

摘要： The present disclosure relates to a semiconductor device, a solid-state image pickup element, an image pickup device, and an electronic apparatus that are enabled to reduce restrictions on materials and restrictions on device configuration. A CSP imager and a mounting substrate are connected together with a connection portion other than a solder ball. With such a configuration, restrictions on materials and restrictions on device configuration are reduced, which has conventionally occurred because it is limited to a configuration in which solder balls are used for connection. The present disclosure can be applied to image pickup devices.

公开(公告)号：US20240064425A1

公开(公告)日：2024-02-22

申请号：US18497512

申请日：2023-10-30

申请人： Sony Semiconductor Solutions Corporation

发明人： Toshiyuki NISHIHARA ,  Tomohiro TAKAHASHI ,  Masao MATSUMURA ,  Tsutomu IMOTO

IPC分类号： H04N25/616 ,  H01L27/146 ,  H04N25/60 ,  H04N25/70 ,  H04N25/75 ,  H04N25/76 ,  H04N25/77 ,  H04N25/79 ,  H04N25/771

CPC分类号： H04N25/616 ,  H01L27/146 ,  H04N25/60 ,  H04N25/70 ,  H04N25/75 ,  H04N25/76 ,  H04N25/77 ,  H04N25/79 ,  H04N25/771 ,  H01L27/14634

摘要： The present technology relates to an imaging element that can reduce noise. The imaging element includes: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; and a second reset element that resets the second amplification element. The offset element is a capacitor. A charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. The present technology can be applied to an imaging element.

公开(公告)号：US11877078B2

公开(公告)日：2024-01-16

申请号：US18152855

申请日：2023-01-11

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Kenta Nojima ,  Kenju Nishikido

IPC分类号： H04N25/70 ,  H01L27/146 ,  H04N25/76

CPC分类号： H04N25/70 ,  H01L27/14605 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14685 ,  H04N25/76 ,  H01L27/1464 ,  H01L27/14643

摘要： The deterioration of light condensing characteristics of an overall solid-state imaging device resulting from providing in-layer lenses is suppressed while preventing the deterioration of device characteristics of the solid-state imaging device and reduction of yield. A solid-state imaging device including: a semiconductor substrate on which a plurality of photoelectric conversion devices are arranged in an imaging device region in a two-dimensional array; and a stacked body formed by stacking a plurality of layers on the semiconductor substrate, wherein the stacked body includes an in-layer lens layer that has in-layer lenses each provided at a position corresponding to each of the photoelectric conversion devices; a planarization layer that is stacked on the in-layer lens layer and that has a generally planarized surface; and an on-chip lens layer that is an upper layer than the planarization layer and that has on-chip lenses each provided at a position corresponding to each of the photoelectric conversion devices, and the in-layer lens layer has a plurality of structures at a height generally equal to a height of the in-layer lenses, the plurality of structures being provided on an outside of the imaging device region.

公开(公告)号：US20240007764A1

公开(公告)日：2024-01-04

申请号：US18468449

申请日：2023-09-15

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： NOBUHIRO KAWAI

IPC分类号： H04N25/65 ,  H01L27/146 ,  H04N25/63 ,  H04N25/70 ,  H04N25/76 ,  H04N25/77 ,  H04N25/79 ,  H04N25/709 ,  H10K19/20 ,  H10K39/32

CPC分类号： H04N25/65 ,  H01L27/14612 ,  H01L27/146 ,  H01L27/14603 ,  H04N25/63 ,  H04N25/70 ,  H04N25/76 ,  H04N25/77 ,  H04N25/79 ,  H04N25/709 ,  H10K19/20 ,  H10K39/32 ,  H01L27/14647 ,  H01L27/14665

摘要： A solid-state imaging element that includes a charge accumulation unit that accumulates a charge photoelectrically converted by a photoelectric conversion unit, a reset transistor that selectively applies a reset voltage to the charge accumulation unit, an amplification transistor having a gate electrode being electrically connected to the charge accumulation unit, and a selection transistor connected in series to the amplification transistor. Additionally, the solid-state imaging element includes a first wiring electrically connecting the charge accumulation unit and the gate electrode of the amplification transistor, a second wiring electrically connected to a common connection node of the amplification transistor and the selection transistor and formed along the first wiring, and a third wiring electrically connecting the amplification transistor and the selection transistor.

公开(公告)号：US11863898B2

公开(公告)日：2024-01-02

申请号：US17521649

申请日：2021-11-08

申请人： Sony Group Corporation

发明人： Shoji Kobayashi ,  Yoshiharu Kudoh ,  Takuya Sano

IPC分类号： H04N25/76 ,  H01L27/146 ,  H04N23/55 ,  H04N23/54 ,  H04N25/70

CPC分类号： H04N25/76 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14645 ,  H04N23/54 ,  H04N23/55 ,  H04N25/70 ,  H01L27/14609

摘要： A solid state imaging device including: a pixel region that is formed on a light incidence side of a substrate and to which a plurality of pixels that include photoelectric conversion units is arranged; a peripheral circuit unit that is formed in a lower portion in the substrate depth direction of the pixel region and that includes an active element; and a light shielding member that is formed between the pixel region and the peripheral circuit unit and that shields the incidence of light, emitted from an active element, to the photoelectric conversion unit.

公开(公告)号：US11856305B2

公开(公告)日：2023-12-26

申请号：US17401385

申请日：2021-08-13

申请人： APPLE INC.

发明人： Emanuele Mandelli ,  Walter Nistico

IPC分类号： H04N25/42 ,  H04N25/44 ,  H04N25/70

CPC分类号： H04N25/42 ,  H04N25/44 ,  H04N25/70

摘要： In one implementation, an event sensor includes a plurality of pixels and an event compiler. The plurality of pixels are positioned to receive light from a scene disposed within a field of view of the event sensor. Each pixel is configured to have an operational state that is modified by control signals generated by a respective state circuit. The event compiler is configured to output a stream of pixel events. Each respective pixel event corresponds to a breach of a comparator threshold related to an intensity of incident illumination. Each control signal is generated based on feedback information that is received from an image pipeline configured to consume image data derived from the stream of pixel events.