公开(公告)号：US12041764B2

公开(公告)日：2024-07-16

申请号：US17449502

申请日：2021-09-30

Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.

Inventor： Gongyi Wu ,  Nan Deng ,  Yuchen Wang

IPC: H10B12/00

CPC classification number: H10B12/053 ,  H10B12/34

Abstract: A method for manufacturing a buried word line transistor can include the following operations. A semiconductor substrate having an active region is provided. A first trench is formed in the active region. A first insulation layer is formed on a side wall of the first trench. A bottom portion of the first trench is etched to form a second trench. A gate oxide layer is formed on a side wall of the first insulation layer and a bottom portion and a side wall of the second trench. A barrier layer is formed at a bottom portion and portion of a side wall of the gate oxide layer. A metal filler layer is formed on an inner side of the barrier layer. The first insulation layer is removed to form a side trench. A second insulation layer is formed at a top end of the side trench. A sealed air spacer layer is formed.

公开(公告)号：US20230209806A1

公开(公告)日：2023-06-29

申请号：US18177813

申请日：2023-03-03

Applicant: Changxin Memory Technologies, Inc.

Inventor： Gongyi WU ,  Ruigen Ding ,  Xianxian Tang ,  Nan Deng ,  Yuchen Wang

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/0387 ,  H10B12/485 ,  H10B12/482 ,  H10B12/37

Abstract: Semiconductor structure and method forming the same are provided. The method includes: providing a substrate and discrete conductive structures on the substrate; forming an insulating layer on an upper surface of each of the conductive structures; forming an isolation structure on a side wall of each of the conductive structures and on a side wall of each of the insulating layers; removing part of the isolation structure located on the side wall of the insulating layer; removing part of the insulating layer that is far away from a respective one of the conductive structures, to form and surround trenches by a surface of the substrate, the side walls of the isolation structures and the side walls of the insulating layers, a width of an opening of each trench being larger than a width of a bottom of each trench in a direction perpendicular to side walls of the trenches.