公开(公告)号：US20240268239A1

公开(公告)日：2024-08-08

申请号：US18430427

申请日：2024-02-01

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Fabrice NEMOUCHI ,  Francois LEFLOCH ,  Shi-Li ZHANG ,  Zhen ZHANG

IPC: H10N60/10 ,  H10N60/01

CPC classification number: H10N60/128 ,  H10N60/0912

Abstract: Method for producing a superconducting transistor comprising:



producing a dummy gate on a first part of a semiconducting layer;
producing superconducting electrodes such that the first part of the semiconducting layer comprises sides edges arranged against parts of the superconducting electrodes, and comprising a deposition of a superconducting material layer having first parts arranged against side edges of the dummy gate and second parts forming parts of the superconducting electrodes;
producing lateral spacers next to the first parts of the superconducting material layer and on the second parts of the superconducting material layer;
removing the dummy gate and the first parts of the superconducting material layer, creating a gate location arranged between the lateral spacers and above the first part of the semiconducting layer and above said parts of the superconducting electrodes;
producing a gate in the gate location.