公开(公告)号：US20190006182A1

公开(公告)日：2019-01-03

申请号：US16024008

申请日：2018-06-29

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Philippe RODRIGUEZ ,  Seifeddine ZHIOU ,  Fabrice NEMOUCHI ,  Patrice GERGAUD

IPC: H01L21/283 ,  H01L29/45 ,  H01L29/40

CPC classification number: H01L21/283 ,  H01L21/28575 ,  H01L29/401 ,  H01L29/41725 ,  H01L29/452

Abstract: A process for manufacturing an intermetallic contact on the surface of a layer or of a substrate of oriented InxGa1-xAs material, the contact includes an Ni—InGaAs intermetallic compound, the intermetallic compound having a hexagonal crystallographic structure that may have: a first texture or a second texture formed at a second nucleation temperature above the first nucleation temperature; the process comprising the following steps: the production of nomograms defining, for a thickness of Ni deposited, the time to completely consume the initial thickness of Ni as a function of the annealing temperature, the annealing temperature being below the nucleation temperature of the second texture; the localized deposition of Ni on the surface of the InxGa1-xAs material; an annealing step applying the pair of parameters: time required/annealing temperature, deduced from the nomograms, comprising at least one temperature rise step and at least one temperature hold of the final annealing temperature.