-
公开(公告)号：US20220235074A1
公开(公告)日：2022-07-28
申请号：US17586673
申请日：2022-01-27
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE , ÉCOLE SUPÉRIEURE DE CHIMIE, PHYSIQUE, ELECTRONIQUE , UNIVERSITE CLAUDE BERNARD LYON 1
摘要： A method for forming a metal-organic framework comprising a step of providing a substrate; a single step of forming a single layer of metal oxide formed on the substrate said layer of metal oxide being transformed in whole or in part into metal-organic framework by successive implementation of a plurality of reaction cycles; each reaction cycle of the plurality of reaction cycles comprising: a treatment step with at least one ligand; a treatment step with at least one additive; the reaction cycles being implemented at least twice so as to form the metal-organic framework on the substrate.
-
公开(公告)号：US20150211112A1
公开(公告)日：2015-07-30
申请号：US14603829
申请日：2015-01-23
申请人： Commissariat A L'Energie Atomique Et Aux Energies Alternatives , Centre National De La Recherche Scientifique , Universite Claude Bernard Lyon 1 , CPE Lyon Formation Continue et Recherche
IPC分类号： C23C16/30 , C23C16/44 , C23C16/56 , C23C16/455 , C23C16/46
CPC分类号： C23C16/305 , C23C16/4402 , C23C16/4408 , C23C16/45536 , C23C16/45553 , C23C16/45555 , C23C16/46 , C23C16/56
摘要： This method relates to the preparation by ALD of a thin film of formula MYx, x being in the range from 1.5 to 3.1.According to this method, MYx is deposited by ALD on a substrate, from at least one precursor of metal M, and at least one precursor of element Y; M being tungsten and/or molybdenum; the degree of oxidation of metal M in the precursor of metal M being in the range from 3 to 6; the metal of the precursor of metal M only including simple or multiple bonds M-Z and/or M-M with Z=C, N, H, and any combination of these atoms; Y being sulfur and/or selenium; the substrate temperature being lower than or equal to 350° C.
摘要翻译： 该方法涉及ALD制备式MYx的薄膜，x在1.5至3.1的范围内。 根据该方法，通过ALD将MYx从金属M的至少一种前体和元素Y的至少一种前体沉积在基材上， M是钨和/或钼; 金属M前体中金属M的氧化度在3〜6的范围内; 金属M的前体的金属仅包括简单或多重键M-Z和/或具有Z = C，N，H的M-M和这些原子的任何组合; Y是硫和/或硒; 基板温度低于或等于350℃
-
公开(公告)号：US20190177838A1
公开(公告)日：2019-06-13
申请号：US16273510
申请日：2019-02-12
申请人： Commissariat A. L 'Energie Atomique Et Aux Energies Alternatives , Centre National De La Recherche Scientifique , Universite Claude Bernard Lyon 1 , CPE Lyon Formation Continue et Recherche
IPC分类号： C23C16/30 , C23C16/455 , C23C16/56
摘要： A method of preparing a crystalline thin film having a formula MY2 includes (1) preparing an MYx amorphous film by atomic layer deposition on a surface of a substrate, and (2) annealing the amorphous MYx film at 350° C. or more to provide the crystalline MY2 film. The amorphous MYx film is formed from at least one metal M precursor and at least one element Y precursor, wherein x is 1.5 to 3.1, M is tungsten or molybdenum, and Y is sulfur or selenium. Step (1) includes a) introducing a first metal M precursor or element Y precursor into a deposition chamber, b) purging with inert gas, c) introducing a second metal M precursor when the first precursor is element Y, or element Y precursor when the first precursor is metal M, d) purging with inert gas, e) repeating steps a) to d), and f) obtaining the amorphous MYx film.
-
-
搜索结果
3 条记录 (耗时 0.033 秒)
