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公开(公告)号：US20150211112A1
公开(公告)日：2015-07-30
申请号：US14603829
申请日：2015-01-23
申请人： Commissariat A L'Energie Atomique Et Aux Energies Alternatives , Centre National De La Recherche Scientifique , Universite Claude Bernard Lyon 1 , CPE Lyon Formation Continue et Recherche
IPC分类号： C23C16/30 , C23C16/44 , C23C16/56 , C23C16/455 , C23C16/46
CPC分类号： C23C16/305 , C23C16/4402 , C23C16/4408 , C23C16/45536 , C23C16/45553 , C23C16/45555 , C23C16/46 , C23C16/56
摘要： This method relates to the preparation by ALD of a thin film of formula MYx, x being in the range from 1.5 to 3.1.According to this method, MYx is deposited by ALD on a substrate, from at least one precursor of metal M, and at least one precursor of element Y; M being tungsten and/or molybdenum; the degree of oxidation of metal M in the precursor of metal M being in the range from 3 to 6; the metal of the precursor of metal M only including simple or multiple bonds M-Z and/or M-M with Z=C, N, H, and any combination of these atoms; Y being sulfur and/or selenium; the substrate temperature being lower than or equal to 350° C.
摘要翻译： 该方法涉及ALD制备式MYx的薄膜，x在1.5至3.1的范围内。 根据该方法，通过ALD将MYx从金属M的至少一种前体和元素Y的至少一种前体沉积在基材上， M是钨和/或钼; 金属M前体中金属M的氧化度在3〜6的范围内; 金属M的前体的金属仅包括简单或多重键M-Z和/或具有Z = C，N，H的M-M和这些原子的任何组合; Y是硫和/或硒; 基板温度低于或等于350℃
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公开(公告)号：US20190177838A1
公开(公告)日：2019-06-13
申请号：US16273510
申请日：2019-02-12
申请人： Commissariat A. L 'Energie Atomique Et Aux Energies Alternatives , Centre National De La Recherche Scientifique , Universite Claude Bernard Lyon 1 , CPE Lyon Formation Continue et Recherche
IPC分类号： C23C16/30 , C23C16/455 , C23C16/56
摘要： A method of preparing a crystalline thin film having a formula MY2 includes (1) preparing an MYx amorphous film by atomic layer deposition on a surface of a substrate, and (2) annealing the amorphous MYx film at 350° C. or more to provide the crystalline MY2 film. The amorphous MYx film is formed from at least one metal M precursor and at least one element Y precursor, wherein x is 1.5 to 3.1, M is tungsten or molybdenum, and Y is sulfur or selenium. Step (1) includes a) introducing a first metal M precursor or element Y precursor into a deposition chamber, b) purging with inert gas, c) introducing a second metal M precursor when the first precursor is element Y, or element Y precursor when the first precursor is metal M, d) purging with inert gas, e) repeating steps a) to d), and f) obtaining the amorphous MYx film.
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公开(公告)号：US20230264183A1
公开(公告)日：2023-08-24
申请号：US18123609
申请日：2023-03-20
申请人： ELKEM SILICONES FRANCE SAS , UNIVERSITE CLAUDE BERNARD LYON I , CPE LYON FORMATION CONTINUE ET RECHERCHE - CPE LYON CFR , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE - CNRS
发明人： Valérie MIELLE , Chloé THIEULEUX , Laurent VEYRE , Iurii SULEIMANOV , Thomas GALEANDRO-DIAMANT , Magali BOUSQUIE
CPC分类号： B01J35/0013 , B01J31/20 , B01J31/1608 , B01J35/023 , B01J2531/842 , B01J2531/845 , B01J2531/847 , B82Y30/00
摘要： Nanoparticles that can be used as hydrosilylation and dehydrogenative silylation catalysts. The nanoparticles have at least one transition metal with an oxidation state of 0, chosen from the metals of columns 8, 9 and 10 of the periodic table, and at least one carbonyl ligand, preferably a silicide.
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公开(公告)号：US20190152877A1
公开(公告)日：2019-05-23
申请号：US15571345
申请日：2016-05-06
摘要： A process for selective partial hydrogenation of conjugated diene compounds includes at least one, preferably terminal, diene function and at least one additional carbon-carbon double bond, the process including reacting the conjugated diene compounds with hydrogen in the presence of an iridium-NHC based catalyst. The disclosure also relates to a reaction mixture that can be obtained at the end of the process. The disclosure also relates to the use of the reaction mixture.
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