Method of making refractory metal carbide thin film resistors
    1.
    发明授权
    Method of making refractory metal carbide thin film resistors 失效
    制造金属碳化物薄膜电阻的方法

    公开(公告)号:US3665599A

    公开(公告)日:1972-05-30

    申请号:US3665599D

    申请日:1970-04-27

    CPC classification number: H01C17/265 H01C7/22 Y10T29/49099

    Abstract: The resistance value of a refractory metal carbide film resistor is adjusted and stabilized at any desired resistance value up to approximately 100 times the resistance value of the originally deposited film by heat treating the metal carbide film in an oxidizing atmosphere at temperatures above the anticipated operating range of the resistor. The heat treatment increases the resistance of the applied film by converting a layer of the exposed film to a non-conductive oxide.

    Abstract translation: 难熔金属碳化物膜电阻器的电阻值通过在高于预期工作范围的温度下在氧化气氛中对金属碳化物膜进行热处理来调节并稳定在最初达到原始沉积膜的电阻值的约100倍的所需电阻值 的电阻。 热处理通过将暴露的膜的层转变为非导电氧化物来增加涂覆膜的电阻。

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