Method of producing magnetic metal oxide films bonded to a substrate
    3.
    发明授权
    Method of producing magnetic metal oxide films bonded to a substrate 失效
    生产与基材结合的磁性金属氧化物膜的方法

    公开(公告)号:US3900593A

    公开(公告)日:1975-08-19

    申请号:US26358672

    申请日:1972-06-16

    CPC classification number: G11B5/842

    Abstract: A method of producing magnetic metal oxide films bonded to an inorganic, non-magnetic substrate comprising the steps of applying a coating to the surface of the substrate, which coating consists of a very fine magnetic metal oxide powder dispersed in a suitable liquid. The applied coating and substrate are then heated to a temperature sufficient to evaporate the liquid constituent of the coating and form a thin, dense, magnetic, metal oxide film chemically bonded to the substrate.

    Method for obtaining the dielectric constant of frit capacitors
    4.
    发明授权
    Method for obtaining the dielectric constant of frit capacitors 失效
    获得电容器电介质常数的方法

    公开(公告)号:US3699620A

    公开(公告)日:1972-10-24

    申请号:US3699620D

    申请日:1968-05-16

    CPC classification number: H01G4/129 H01B3/08 Y10T29/435

    Abstract: A frit capacitor of either the discrete or integrated microcircuit variety having a ferroelectric glass-ceramic dielectric whose dielectric constant is of intermediate value between about 20 and 400. The desired value of dielectric constant is accurately obtained in a readily reproducible manner by mixing a batch containing appropriate quantities of stable non-crystallizable glass particles and glass particles capable of forming a ferroelectric crystal phase. The desired dielectric constant is obtained by subjecting the batch to heat treatment. By controlling the weight ratio of the two glass components during the batch preparation, individual capacitor dielectrics having different dielectric constants can be provided utilizing the same firing schedule for each.

    Abstract translation: 离散或集成的微电路品种的玻璃料电容器具有铁电玻璃 - 陶瓷电介质,其介电常数介于约20和400之间。介电常数的期望值通过混合含有 能够形成铁电晶相的稳定的不可结晶玻璃粒子和玻璃粒子。 通过对批次进行热处理获得所需的介电常数。 通过在批量制备期间控制两个玻璃组分的重量比,可以利用相同的每种烧制方案来提供具有不同介电常数的单个电容器电介质。

    Hermetic enclosure for electronic component
    6.
    发明授权
    Hermetic enclosure for electronic component 失效
    电子元件密封圈

    公开(公告)号:US3918147A

    公开(公告)日:1975-11-11

    申请号:US45428974

    申请日:1974-03-25

    Inventor: HERCZOG ANDREW

    CPC classification number: H01G9/10 Y10T29/417

    Abstract: A hermetic enclosure for an electrical component, particularly for a tantalum capacitor, and a method of forming it is disclosed. A silver container is provided having an open end at which an outwardly protruding flange is formed. A quantity of sealing glass is sealed to a lead and formed into a bead about the lead intermediate the ends thereof. A metallic collar having an outwardly protruding flange is disposed about the bead. This assembly and a metallic band, having a temperature coefficient of expansion greater than the glass bead, is heated and the metallic band is disposed about the collar so as to place the collar and glass bead in compression upon cooling thereby effecting a compression seal between the collar and the glass bead. A hermetic seal is then effected between the outwardly protruding flange of the container and the outwardly protruding flange of the collar.

    Abstract translation: 公开了一种用于电气部件,特别是用于钽电容器的密封外壳及其形成方法。 提供一个银容器,其具有形成向外突出的凸缘的开口端。 一定数量的密封玻璃被密封到引线上,并在其端部的中间形成围绕铅的珠。 具有向外突出的凸缘的金属套环设置在胎圈周围。 该组件和具有大于玻璃珠的膨胀温度系数的金属带被加热并且金属带围绕套环设置,以便在冷却时将套环和玻璃珠置于压缩状态,从而在第 领和玻璃珠。 然后在容器的向外突出的凸缘和套环的向外突出的凸缘之间实现气密密封。

    Method of making refractory metal carbide thin film resistors
    9.
    发明授权
    Method of making refractory metal carbide thin film resistors 失效
    制造金属碳化物薄膜电阻的方法

    公开(公告)号:US3665599A

    公开(公告)日:1972-05-30

    申请号:US3665599D

    申请日:1970-04-27

    CPC classification number: H01C17/265 H01C7/22 Y10T29/49099

    Abstract: The resistance value of a refractory metal carbide film resistor is adjusted and stabilized at any desired resistance value up to approximately 100 times the resistance value of the originally deposited film by heat treating the metal carbide film in an oxidizing atmosphere at temperatures above the anticipated operating range of the resistor. The heat treatment increases the resistance of the applied film by converting a layer of the exposed film to a non-conductive oxide.

    Abstract translation: 难熔金属碳化物膜电阻器的电阻值通过在高于预期工作范围的温度下在氧化气氛中对金属碳化物膜进行热处理来调节并稳定在最初达到原始沉积膜的电阻值的约100倍的所需电阻值 的电阻。 热处理通过将暴露的膜的层转变为非导电氧化物来增加涂覆膜的电阻。

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