FOCAL PLANE ARRAY HAVING AN INDIUM ARSENIDE ABSORBER LAYER

    公开(公告)号:US20230170427A1

    公开(公告)日:2023-06-01

    申请号:US17993579

    申请日:2022-11-23

    CPC classification number: H01L31/0304 H01L31/109 H01L31/035236

    Abstract: The present invention relates to a focal plane array having a substrate wafer; an n-type indium arsenide layer disposed atop the substrate wafer; a barrier layer disposed atop the substrate wafer; and a doped n-type layer disposed atop the barrier layer. The present invention further relates to a focal plane array, having a substrate wafer; an n-type indium arsenide layer disposed atop the substrate wafer; and a p-type indium arsenide layer positioned at a first surface of the n-type indium arsenide layer opposite an interface surface of the n-type indium arsenide and the substrate wafer.

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