公开(公告)号：US20240019509A1

公开(公告)日：2024-01-18

申请号：US18251296

申请日：2021-10-28

Applicant: CROCUS Technology SA

Inventor： Jeffrey Childress ,  Nikita Strelkov ,  Andrey Timopheev

IPC: G01R33/09 ,  G01R33/00 ,  H01F1/00

CPC classification number: G01R33/098 ,  G01R33/093 ,  G01R33/0052 ,  H01F1/0009

Abstract: A magnetoresistive element for a magnetic sensor, the magnetoresistive element including a tunnel barrier layer between a reference layer having a fixed reference magnetization and a sense layer having a free sense magnetization, wherein the sense magnetization includes a stable vortex configuration. The magnetoresistive element further includes a reference pinning layer in contact with the reference layer and pining the reference magnetization by exchange-bias at a first blocking temperature. The magnetoresistive element further includes a sense pinning layer in contact with the sense layer and pining the sense magnetization by exchange-bias at a second blocking temperature lower that the first blocking temperature. Additionally, a method for manufacturing the magnetoresistive element.

公开(公告)号：US20230213597A1

公开(公告)日：2023-07-06

申请号：US17998984

申请日：2021-05-10

Applicant: CROCUS Technology SA

Inventor： Andrey Timopheev ,  Jeffrey Childress ,  Nikita Strelkov

IPC: G01R33/00 ,  G01R33/09

CPC classification number: G01R33/0017 ,  G01R33/098 ,  G01R33/1215

Abstract: Magnetic angular sensor element destined to sense an external magnetic field, including a magnetic tunnel junction containing a ferromagnetic pinned layer having a pinned magnetization, a ferromagnetic sensing layer, and a tunnel magnetoresistance barrier layer; the ferromagnetic sensing layer including a first sensing layer being in direct contact with the barrier layer and having a first sensing magnetization, a second sensing layer having a second sense magnetization, and a metallic spacer between the first sensing layer and the second sensing layer; wherein the metallic spacer is configured to provide an antiferromagnetic coupling between the first sensing magnetization and the second sensing magnetization such that the first sensing magnetization is oriented substantially antiparallel to the second sensing magnetization; the second sensing magnetization being larger than the first sensing magnetization, such that the second sensing magnetization is oriented in accordance with the direction of the external magnetic field.

公开(公告)号：US20240027551A1

公开(公告)日：2024-01-25

申请号：US18256494

申请日：2021-12-09

Applicant: CROCUS Technology SA

Inventor： Jeffrey Childress ,  Nikita Strelkov

IPC: G01R33/09

CPC classification number: G01R33/098

Abstract: Magnetoresistive element including a reference layer having a fixed reference magnetization, a sense layer having a free sense magnetization and a tunnel barrier layer between the reference layer and the sense layer; the magnetoresistive element being configured to measure an external magnetic field oriented substantially perpendicular to the plane of the layers. The reference magnetization being oriented substantially perpendicular to the plane of the reference layer. The sense magnetization including a vortex configuration in the absence of an external magnetic field, the vortex configuration being substantially parallel to the plane of the sense layer and having a vortex core magnetization along an out-of-plane axis substantially perpendicular to the plane of the sense layer.

公开(公告)号：US20230296703A1

公开(公告)日：2023-09-21

申请号：US18245380

申请日：2021-09-14

Applicant: CROCUS Technology SA

Inventor： Andrey Timopheev ,  Nikita Strelkov ,  Jeffrey Childress

IPC: G01R33/09

CPC classification number: G01R33/098

Abstract: A magnetoresistive element for a 2D magnetic sensor, the magnetoresistive element including a tunnel barrier layer included between a reference layer having a reference magnetization and a sense layer having a sense magnetization. The sense layer includes a sense synthetic antiferromagnetic structure including a first sense sublayer in contact with the tunnel barrier layer and separated from a second sense sublayer by a first non-magnetic spacer layer such that the first sense sublayer is antiferromagnetically coupled to the second sense sublayer. The sense layer is configured such that a sense magnetic ratio ΔM defined as:




Δ
M
=


M

s

F
M
2



t

F
M
2


−
M

s

F
M
1



t

F
M
1




M

s

F
M
2



t

F
M
2


+
M

s

F
M
1



t

F
M
1








wherein MSFM1 and MSFM2 are the spontaneous magnetizations of the first and second sense sublayers and tFM1 and tFM2 are the thicknesses of the first and second sense sublayers; and wherein the sense magnetic ratio is between 0.1 and 0.25.

公开(公告)号：US20230292624A1

公开(公告)日：2023-09-14

申请号：US17999578

申请日：2021-05-27

Applicant: CROCUS Technology SA

Inventor： Andrey Timopheev ,  Nikita Strelkov ,  Jeffrey Childress

IPC: H10N50/10 ,  H10N50/80

CPC classification number: H10N50/10 ,  H10N50/80

Abstract: A magnetic sensor including a plurality of magnetoresistive elements; each magnetoresistive element including a ferromagnetic layer having a magnetization that is orientable at or above a threshold temperature; the magnetic sensor further includes a plasmonic structure destined to be irradiated by electromagnetic radiation and including a spatially periodic plasmonic array of metallic structures. The period of the plasmonic array and the lateral dimension of the metallic structures are adjusted to obtain plasmon resonance of the plasmonic structure for a given wavelength of the electromagnetic radiation. The plasmonic array is arranged in the magnetic sensor such as to heat the first ferromagnetic layer at or above the threshold temperature, from the enhanced absorption of the electromagnetic radiation by plasmon resonance. The present disclosure further concerns a system including the sensor and an emitting device configured to emit electromagnetic radiation.