公开(公告)号：US20180006043A1

公开(公告)日：2018-01-04

申请号：US15547278

申请日：2015-09-23

Applicant: CSMC TECHNOLOGIES CO., LTD

Inventor： Guipeng SUN ,  Qiong WANG ,  Guangtao HAN

IPC: H01L27/112 ,  H01L21/265 ,  H01L21/266 ,  H01L29/06

CPC classification number: H01L27/11266 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/266 ,  H01L29/0607 ,  H01L29/66492

Abstract: A preparation method for a flat cell ROM device, comprising the steps of: providing a substrate, and forming a P well on the substrate; forming a photomask layer on the P well and performing photoetching to form an injection window; injecting P-type ions in the formed injection window to form a P-type region; injecting N-type ions in the injection window so as to form an N-type region on the P-type region; and forming a gate oxide layer and a poly-silicon gate so as to complete the preparation of a device.