公开(公告)号：US20180006043A1

公开(公告)日：2018-01-04

申请号：US15547278

申请日：2015-09-23

Applicant: CSMC TECHNOLOGIES CO., LTD

Inventor： Guipeng SUN ,  Qiong WANG ,  Guangtao HAN

IPC: H01L27/112 ,  H01L21/265 ,  H01L21/266 ,  H01L29/06

CPC classification number: H01L27/11266 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/266 ,  H01L29/0607 ,  H01L29/66492

Abstract: A preparation method for a flat cell ROM device, comprising the steps of: providing a substrate, and forming a P well on the substrate; forming a photomask layer on the P well and performing photoetching to form an injection window; injecting P-type ions in the formed injection window to form a P-type region; injecting N-type ions in the injection window so as to form an N-type region on the P-type region; and forming a gate oxide layer and a poly-silicon gate so as to complete the preparation of a device.

公开(公告)号：US20150270139A1

公开(公告)日：2015-09-24

申请号：US14436037

申请日：2013-12-31

Applicant: CSMC TECHNOLOGIES CO., LTD.

Inventor： Qiliang Sun

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  B81C1/00476 ,  B81C2201/0132

Abstract: A corrosion method of a passivation layer (320) of a silicon wafer (300) includes: pouring hydrofluoric acid solution (100) into a container (200) with an open top; putting the silicon wafer (300) to the opening of the container (200) and one side of the silicon wafer (300) with the passivation layer (320) is opposite to the hydrofluoric acid solution (100); the hydrogen fluoride gas generated from the volatilization of the hydrofluoric acid solution (100) corrodes the passivation layer (320) of the silicon wafer (300), the corrosion time is larger or equal to (thickness of the passivation layer/corrosion rate). By means of the corrosion of the passivation layer of silicon wafer by the fluoride gas generated from the volatilization of the hydrofluoric acid solution, the fluoride gas can fully touch the passivation layer; therefore the passivation layer can be completely corroded, and the corrosion precision is high.

Abstract translation: 硅晶片（300）的钝化层（320）的腐蚀方法包括：将氢氟酸溶液（100）倒入具有开口顶部的容器（200）中; 将硅晶片（300）放置到容器（200）的开口，并且具有钝化层（320）的硅晶片（300）的一侧与氢氟酸溶液（100）相反; 由氢氟酸溶液（100）的挥发产生的氟化氢气体腐蚀硅晶片（300）的钝化层（320），腐蚀时间大于或等于（钝化层的厚度/腐蚀速率）。 通过由氢氟酸溶液的挥发产生的氟化物气体对硅晶片的钝化层的腐蚀，氟化物气体可完全接触钝化层; 因此钝化层可以完全腐蚀，腐蚀精度高。