公开(公告)号：US11926523B2

公开(公告)日：2024-03-12

申请号：US17470236

申请日：2021-09-09

Applicant: BEIJING VOYAGER TECHNOLOGY CO., LTD.

Inventor： Youmin Wang ,  Yue Lu

IPC: B81C1/00 ,  G02B26/08 ,  G02B26/10 ,  G01S7/481

CPC classification number: B81C1/00174 ,  G02B26/0833 ,  G02B26/10 ,  B81C2201/0142 ,  B81C2201/0181 ,  B81C2203/032 ,  G01S7/4817

Abstract: Embodiments of the disclosure provide methods for microfabricating an omni-view peripheral scanning system. One exemplary method may include separately fabricating a reflector and a scanning MEMS mirror, and then bonding the microfabricated reflector with the scanning MEMS mirror to form the omni-view peripheral scanning system. The microfabricated reflector may include a cone-shaped bottom portion, and a via hole across the cone-shaped bottom portion. The microfabricated scanning MEMS mirror may include a MEMS actuation platform and a scanning mirror supported by the MEMS actuation platform. The scanning MEMS mirror may face the cone-shaped bottom portion of the reflector when forming the omni-view peripheral scanning system.

公开(公告)号：US10003014B2

公开(公告)日：2018-06-19

申请号：US14310844

申请日：2014-06-20

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  CROCUS TECHNOLOGY

Inventor： Michael C. Gaidis ,  Erwan Gapihan ,  Rohit Kilaru ,  Eugene J. O'Sullivan

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/12 ,  H01L21/311 ,  H01L43/02 ,  H01L43/10

CPC classification number: H01L43/08 ,  B81C2201/0132 ,  B81C2201/0142 ,  B81C2201/0143 ,  G11C11/161 ,  G11C2211/5615 ,  H01L21/31105 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A method of forming a memory device that in one embodiment may include forming a magnetic tunnel junction on a first electrode using an electrically conductive mask and subtractive etch method. Following formation of the magnetic tunnel junction, at least one dielectric layer is deposited to encapsulate the magnetic tunnel junction. Ion beam etching/Ion beam milling may then remove the portion of the at least one dielectric layer that is present on the electrically conductive mask, wherein a remaining portion of the at least one dielectric layer is present over the first electrode. A second electrode may then be formed in contact with the electrically conductive mask.

公开(公告)号：US09880036B2

公开(公告)日：2018-01-30

申请号：US14933982

申请日：2015-11-05

Applicant: Xiang Zheng Tu

Inventor： Xiang Zheng Tu

IPC: G01F1/692 ,  B81C1/00 ,  H01L35/34 ,  G01F1/684 ,  G01F1/688 ,  H01L21/3063

CPC classification number: G01F1/692 ,  B81C1/00158 ,  B81C1/00246 ,  B81C1/00571 ,  B81C2201/0115 ,  B81C2201/0142 ,  G01F1/6845 ,  G01F1/688 ,  H01L21/3063 ,  H01L35/34

Abstract: A vacuum-cavity-insulated flow sensor and related fabrication method are described. The sensor comprises a porous silicon wall with numerous vacuum-pores which is created in a silicon substrate, a porous silicon membrane with numerous vacuum-pores which is surrounded and supported by the porous silicon wall, and a cavity with a vacuum-space which is disposed beneath the porous silicon membrane and surrounded by the porous silicon wall. The fabrication method includes porous silicon formation and silicon polishing in HF solution.

公开(公告)号：US09640370B2

公开(公告)日：2017-05-02

申请号：US14195887

申请日：2014-03-04

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Oliver James Ansell

IPC: H01J37/32 ,  H01L21/66 ,  B81C99/00

CPC classification number: H01J37/32963 ,  B81C99/0065 ,  B81C2201/0135 ,  B81C2201/0142 ,  H01J37/32972 ,  H01L22/26

Abstract: A method is for etching the whole width of a substrate to expose buried features. The method includes etching a face of a substrate across its width to achieve substantially uniform removal of material; illuminating the etched face during the etch process; applying edge detection techniques to light reflected or scattered from the face to detect the appearances of buried features; and modifying the etch in response to the detection of the buried feature. An etching apparatus for etching substrate across its width to expose buried is also disclosed.

公开(公告)号：US20160276579A1

公开(公告)日：2016-09-22

申请号：US15170359

申请日：2016-06-01

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  CROCUS TECHNOLOGY

Inventor： Michael C. Gaidis ,  Erwan Gapihan ,  Rohit Kilaru ,  Eugene J. O'Sullivan

IPC: H01L43/08 ,  H01L43/12 ,  G11C11/16 ,  H01L43/02 ,  H01L43/10

CPC classification number: H01L43/08 ,  B81C2201/0132 ,  B81C2201/0142 ,  B81C2201/0143 ,  G11C11/161 ,  G11C2211/5615 ,  H01L21/31105 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A method of forming a memory device that in one embodiment may include forming a magnetic tunnel junction on a first electrode using an electrically conductive mask and subtractive etch method. Following formation of the magnetic tunnel junction, at least one dielectric layer is deposited to encapsulate the magnetic tunnel junction. Ion beam etching/Ion beam milling may then remove the portion of the at least one dielectric layer that is present on the electrically conductive mask, wherein a remaining portion of the at least one dielectric layer is present over the first electrode. A second electrode may then be formed in contact with the electrically conductive mask.

公开(公告)号：US20150372225A1

公开(公告)日：2015-12-24

申请号：US14310844

申请日：2014-06-20

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  CROCUS TECHNOLOGY

Inventor： Michael C. Gaidis ,  Erwan Gapihan ,  Rohit Kilaru ,  Eugene J. O'Sullivan

IPC: H01L43/08 ,  H01L43/12 ,  H01L43/10

CPC classification number: H01L43/08 ,  B81C2201/0132 ,  B81C2201/0142 ,  B81C2201/0143 ,  G11C11/161 ,  H01L21/31105 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A method of forming a memory device that in one embodiment may include forming a magnetic tunnel junction on a first electrode using an electrically conductive mask and subtractive etch method. Following formation of the magnetic tunnel junction, at least one dielectric layer is deposited to encapsulate the magnetic tunnel junction. Ion beam etching/Ion beam milling may then remove the portion of the at least one dielectric layer that is present on the electrically conductive mask, wherein a remaining portion of the at least one dielectric layer is present over the first electrode. A second electrode may then be formed in contact with the electrically conductive mask.

Abstract translation: 一种形成存储器件的方法，其在一个实施例中可包括使用导电掩模和减去蚀刻方法在第一电极上形成磁性隧道结。 在形成磁性隧道结之后，沉积至少一个电介质层以封装磁性隧道结。 离子束蚀刻/离子束研磨然后可以去除存在于导电掩模上的至少一个电介质层的部分，其中至少一个电介质层的剩余部分存在于第一电极上。 然后可以形成与导电掩模接触的第二电极。

公开(公告)号：US08815177B2

公开(公告)日：2014-08-26

申请号：US12812974

申请日：2009-01-21

Applicant: Thomas D. Perroud ,  Kamlesh D. Patel

Inventor： Thomas D. Perroud ,  Kamlesh D. Patel

IPC: G01N1/40 ,  B01L3/00

CPC classification number: G01N33/5005 ,  B01F3/0807 ,  B01F5/0471 ,  B01F13/0059 ,  B01L3/502707 ,  B01L3/502753 ,  B01L3/502761 ,  B01L3/502776 ,  B01L3/502784 ,  B01L2200/0668 ,  B01L2300/0816 ,  B01L2300/0864 ,  B01L2400/0688 ,  B81B2201/058 ,  B81C1/00047 ,  B81C1/00087 ,  B81C1/00119 ,  B81C1/00404 ,  B81C2201/0133 ,  B81C2201/0142 ,  Y10T137/9464 ,  Y10T428/24479

Abstract: Disclosed herein are methods of immobilizing a particle which comprise focusing the flow of a sample fluid containing the particle into a virtual channel which flows towards an unoccupied hydrodynamic trap in a microfluidic channel such that the particle flows into the hydrodynamic trap and becomes immobilized therein. Also disclosed are microfluidic devices which comprise at least one microchannel having at least one hydrodynamic trap, at least one focusing fluid inlet, said focusing fluid inlet is upstream of the hydrodynamic trap such that a focusing fluid introduced therein results in a virtual channel of a sample fluid when present which preferentially flows toward the hydrodynamic trap.

Abstract translation: 本文公开了固定颗粒的方法，其包括将含有颗粒的样品流体的流动聚焦到虚拟通道中，该虚拟通道朝向微流体通道中的未占据的流体动力阱捕获，使得颗粒流入流体动力阱并固定在其中。 还公开了微流体装置，其包括具有至少一个流体动力捕集器，至少一个聚焦流体入口的至少一个微通道，所述聚焦流体入口在流体动力捕集器的上游，使得其中引入的聚焦流体导致样品的虚拟通道 存在时优先流向流体动力阱的流体。

公开(公告)号：US20140174658A1

公开(公告)日：2014-06-26

申请号：US14195887

申请日：2014-03-04

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Oliver James Ansell

IPC: H01J37/32 ,  H01L21/66

CPC classification number: H01J37/32963 ,  B81C99/0065 ,  B81C2201/0135 ,  B81C2201/0142 ,  H01J37/32972 ,  H01L22/26

Abstract: A method is for etching the whole width of a substrate to expose buried features. The method includes etching a face of a substrate across its width to achieve substantially uniform removal of material; illuminating the etched face during the etch process; applying edge detection techniques to light reflected or scattered from the face to detect the appearances of buried features; and modifying the etch in response to the detection of the buried feature. An etching apparatus for etching substrate across its width to expose buried is also disclosed.

Abstract translation: 一种方法是蚀刻衬底的整个宽度以暴露掩埋的特征。 该方法包括在其宽度上蚀刻衬底的表面以实现材料的基本上均匀的去除; 在蚀刻过程中照射蚀刻的面; 将边缘检测技术应用于从脸部反射或散射的光，以检测埋藏特征的外观; 以及响应于所述掩埋特征的检测来修改所述蚀刻。 还公开了一种用于蚀刻衬底跨越其宽度以暴露掩埋的蚀刻装置。

公开(公告)号：US20080074564A1

公开(公告)日：2008-03-27

申请号：US11927725

申请日：2007-10-30

Applicant: Shin-Ichi UEHARA ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

Inventor： Shin-Ichi UEHARA ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

IPC: G02F1/1335

CPC classification number: G02B3/0056 ,  B81B2207/056 ,  B81C1/00031 ,  B81C2201/0133 ,  B81C2201/0142 ,  C03C15/00 ,  C03C17/34 ,  C03C2204/08 ,  C03C2218/34 ,  G02B3/0012 ,  G02F1/133526 ,  Y10T428/131 ,  Y10T428/249969 ,  Y10T428/315

Abstract: In a formation method for forming a fine structure in a workpiece (30) containing an etching control component, using an isotropic etching process, a mask (32, 34) having an opening (36) is applied to the workpiece, and the workpiece is etched with an etching solution (38) to thereby form a recess (40), corresponding to a shape of the opening, in a surface of the workpiece. The etching of the workpiece is stopped due to the etching control component eluted out of the workpiece in the etching solution within the recess during the isotropic etching process.

Abstract translation: 在包含蚀刻控制部件的工件（30）中形成精细结构的形成方法中，使用各向同性蚀刻工序，将具有开口（36）的掩模（32,34）施加到工件上，工件为 用蚀刻溶液（38）蚀刻，从而在工件的表面形成对应于开口形状的凹部（40）。 由于在各向同性蚀刻工艺期间蚀刻控制部件在凹陷内的蚀刻溶液中从工件中洗脱出来，停止了工件的蚀刻。

公开(公告)号：US20080057731A1

公开(公告)日：2008-03-06

申请号：US11927730

申请日：2007-10-30

Applicant: Shinichi UEHARA ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

Inventor： Shinichi UEHARA ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

IPC: H01L21/302 ,  H01L21/461

CPC classification number: G02B3/0056 ,  B81B2207/056 ,  B81C1/00031 ,  B81C2201/0133 ,  B81C2201/0142 ,  C03C15/00 ,  C03C17/34 ,  C03C2204/08 ,  C03C2218/34 ,  G02B3/0012 ,  G02F1/133526 ,  Y10T428/131 ,  Y10T428/249969 ,  Y10T428/315

Abstract: In a formation method for forming a fine structure in a workpiece (30) containing an etching control component, using an isotropic etching process, a mask (32, 34) having an opening (36) is applied to the workpiece, and the workpiece is etched with an etching solution (38) to thereby form a recess (40), corresponding to a shape of the opening, in a surface of the workpiece. The etching of the workpiece is stopped due to the etching control component eluted out of the workpiece in the etching solution within the recess during the isotropic etching process.