公开(公告)号：US20140145290A1

公开(公告)日：2014-05-29

申请号：US14130449

申请日：2012-10-23

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Lihui Gu

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/872

CPC classification number: H01L29/0634 ,  H01L29/0619 ,  H01L29/10 ,  H01L29/402 ,  H01L29/66143 ,  H01L29/872

Abstract: A high-voltage Schottky diode and a manufacturing method thereof are disclosed in the present disclosure. The diode includes: a P-type substrate and two N-type buried layers, a first N-type buried layer is located below a cathode lead-out area, and a second N-type buried layer is located below a cathode region; an epitaxial layer; two N-type well regions located on the epitaxial layer, a first N-type well region is a lateral drift region and it is provided with a cathode lead-out region, and a second N-type well region is located on the second N-type buried layer and it is a cathode region; a first P-type well region located on the second N-type buried layer and surrounding the cathode region; a field oxide isolation region located on the lateral drift region; an anode located on the cathode region and a cathode located on the surface of the cathode lead-out region.

Abstract translation: 公开了一种高电压肖特基二极管及其制造方法。 二极管包括：P型衬底和两个N型埋层，第一N型掩埋层位于阴极引出区下方，第二N型掩埋层位于阴极区下面; 外延层; 位于外延层上的两个N型阱区，第一N型阱区是横向漂移区，并具有阴极引出区，第二N型阱区位于第二N 型埋层，是阴极区; 位于所述第二N型掩埋层上并围绕所述阴极区的第一P型阱区; 位于所述横向漂移区上的场氧化物隔离区; 位于阴极区域的阳极和位于阴极引出区域的表面上的阴极。

公开(公告)号：US08957494B2

公开(公告)日：2015-02-17

申请号：US14130449

申请日：2012-10-23

Applicant: CSMC Technologies FAB1 Co., Ltd.

Inventor： Lihui Gu

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/66 ,  H01L29/40 ,  H01L29/10

CPC classification number: H01L29/0634 ,  H01L29/0619 ,  H01L29/10 ,  H01L29/402 ,  H01L29/66143 ,  H01L29/872

Abstract: A high-voltage Schottky diode and a manufacturing method thereof are disclosed in the present disclosure. The diode includes: a P-type substrate and two N-type buried layers, a first N-type buried layer is located below a cathode lead-out area, and a second N-type buried layer is located below a cathode region; an epitaxial layer; two N-type well regions located on the epitaxial layer, a first N-type well region is a lateral drift region and it is provided with a cathode lead-out region, and a second N-type well region is located on the second N-type buried layer and it is a cathode region; a first P-type well region located on the second N-type buried layer and surrounding the cathode region; a field oxide isolation region located on the lateral drift region; an anode located on the cathode region and a cathode located on the surface of the cathode lead-out region.

Abstract translation: 公开了一种高电压肖特基二极管及其制造方法。 二极管包括：P型衬底和两个N型埋层，第一N型掩埋层位于阴极引出区下方，第二N型掩埋层位于阴极区下面; 外延层; 位于外延层上的两个N型阱区，第一N型阱区是横向漂移区，并具有阴极引出区，第二N型阱区位于第二N 型埋层，是阴极区; 位于所述第二N型掩埋层上并围绕所述阴极区的第一P型阱区; 位于所述横向漂移区上的场氧化物隔离区; 位于阴极区域的阳极和位于阴极引出区域的表面上的阴极。