公开(公告)号：US09252240B2

公开(公告)日：2016-02-02

申请号：US14436016

申请日：2013-12-31

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Jian Xu ,  Min He ,  Shu Zhang ,  Zehuang Luo ,  Xiaojia Wu

IPC: H01L21/762 ,  H01L29/66 ,  H01L29/10 ,  H01L21/02 ,  H01L21/265 ,  H01L21/306 ,  H01L21/311 ,  H01L29/40

CPC classification number: H01L29/66681 ,  H01L21/0217 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/32 ,  H01L21/76213 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/408

Abstract: A manufacturing method for a semiconductor device with a discrete field oxide structure is provided, the method includes: growing a first PAD oxide layer on the surface of a wafer; forming a first silicon nitride layer (302) on the first PAD oxide layer through deposition; defining a field region by photolithography and etching same to remove the first silicon nitride layer (302) located on the field region; performing an ion implantation process to the field region; performing field region oxidation to grow a field oxide layer (304); peeling off the first silicon nitride layer (302); wet-dipping the wafer to remove the first PAD oxide layer and a part of field oxide layer (304); growing a second PAD oxide layer on the surface of the wafer, and forming a second silicon nitride layer (312) on the second PAD oxide layer through deposition; defining a drift region by photolithography and etching same to remove the second silicon nitride layer (312) on the drift region; performing an ion implantation process to the drift region; and performing drift region oxidation to grow a drift region oxide layer (314). The above-mentioned method peels off the silicon nitride layer (302) after the growth of the field oxide layer (304) is finished, at this time, the length of a bird beak of field-oxide (304) can be optimized by adjusting a wet-dipping amount to solve the problem that the bird beak of field-oxide (304) is too long.

Abstract translation: 提供一种具有离散场氧化物结构的半导体器件的制造方法，该方法包括：在晶片表面上生长第一PAD氧化物层; 通过沉积在所述第一PAD氧化物层上形成第一氮化硅层（302）; 通过光刻法定义场区域并进行蚀刻以去除位于场区域上的第一氮化硅层（302）; 对场区进行离子注入工艺; 进行场区氧化以生长场氧化物层（304）; 剥离第一氮化硅层（302）; 湿浸湿晶片以去除第一PAD氧化物层和一部分场氧化物层（304）; 在所述晶片的表面上生长第二PAD氧化物层，并且通过沉积在所述第二PAD氧化物层上形成第二氮化硅层（312）; 通过光刻法定义漂移区域并进行蚀刻以去除漂移区域上的第二氮化硅层（312）; 对漂移区域进行离子注入工艺; 以及进行漂移区氧化以生长漂移区氧化物层（314）。 上述方法在场氧化物层（304）的生长完成之后，剥离氮化硅层（302），此时可以通过调整场氧化物（304）的鸟喙的长度来优化 用于解决场氧化物（304）的鸟喙太长的问题的湿浸量。

公开(公告)号：US20150295069A1

公开(公告)日：2015-10-15

申请号：US14436016

申请日：2013-12-31

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Jian Xu ,  Min He ,  Shu Zhang ,  Zehuang Luo ,  Xiaojia Wu

IPC: H01L29/66 ,  H01L29/10 ,  H01L29/40 ,  H01L21/265 ,  H01L21/306 ,  H01L21/311 ,  H01L21/762 ,  H01L21/02

CPC classification number: H01L29/66681 ,  H01L21/0217 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/32 ,  H01L21/76213 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/408

Abstract: A manufacturing method for a semiconductor device with a discrete field oxide structure is provided, the method includes: growing a first PAD oxide layer on the surface of a wafer; forming a first silicon nitride layer (302) on the first PAD oxide layer through deposition; defining a field region by photolithography and etching same to remove the first silicon nitride layer (302) located on the field region; performing an ion implantation process to the field region; performing field region oxidation to grow a field oxide layer (304); peeling off the first silicon nitride layer (302); wet-dipping the wafer to remove the first PAD oxide layer and a part of field oxide layer (304); growing a second PAD oxide layer on the surface of the wafer, and forming a second silicon nitride layer (312) on the second PAD oxide layer through deposition; defining a drift region by photolithography and etching same to remove the second silicon nitride layer (312) on the drift region; performing an ion implantation process to the drift region; and performing drift region oxidation to grow a drift region oxide layer (314). The above-mentioned method peels off the silicon nitride layer (302) after the growth of the field oxide layer (304) is finished, at this time, the length of a bird beak of field-oxide (304) can be optimized by adjusting a wet-dipping amount to solve the problem that the bird beak of field-oxide (304) is too long.

Abstract translation: 提供一种具有离散场氧化物结构的半导体器件的制造方法，该方法包括：在晶片表面上生长第一PAD氧化物层; 通过沉积在所述第一PAD氧化物层上形成第一氮化硅层（302）; 通过光刻法定义场区域并进行蚀刻以去除位于场区域上的第一氮化硅层（302）; 对场区进行离子注入工艺; 进行场区氧化以生长场氧化物层（304）; 剥离第一氮化硅层（302）; 湿浸湿晶片以去除第一PAD氧化物层和一部分场氧化物层（304）; 在所述晶片的表面上生长第二PAD氧化物层，并且通过沉积在所述第二PAD氧化物层上形成第二氮化硅层（312）; 通过光刻法定义漂移区域并进行蚀刻以去除漂移区域上的第二氮化硅层（312）; 对漂移区域进行离子注入工艺; 以及进行漂移区氧化以生长漂移区氧化物层（314）。 上述方法在场氧化物层（304）的生长完成之后，剥离氮化硅层（302），此时可以通过调整场氧化物（304）的鸟喙的长度来优化 用于解决场氧化物（304）的鸟喙太长的问题的湿浸量。