公开(公告)号：US09153781B2

公开(公告)日：2015-10-06

申请号：US14355500

申请日：2012-10-22

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Tsung-Nten Hsu ,  Zhaoyu Yang ,  Zhiyong Zhao ,  Chunshan Lu

IPC: H01L21/311 ,  H01L45/00

CPC classification number: H01L45/1633 ,  H01L45/04 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1675 ,  H01L45/1683

Abstract: A manufacturing method of a resistive random access storage unit, includes: forming a resistance layer on a first metal layer having a flat surface; forming a passivation layer on the resistance layer; performing an etching process to obtain a plurality of basic units, a basic unit comprising a first metal layer, a resistance layer, and a passivation layer, which are laminated sequentially; depositing a insulating dielectric layer, and flattening the insulating dielectric layer; etching the insulating dielectric layer and the passivation layer to form contacting holes corresponded to the basic units; filling metal wires in the contacting holes; forming a second metal layer. According to the above method, a uniformly distributed resistance can be formed on a whole wafer.

Abstract translation: 一种电阻随机存取存储单元的制造方法，包括：在具有平坦表面的第一金属层上形成电阻层; 在电阻层上形成钝化层; 执行蚀刻处理以获得多个基本单元，包括依次层叠的包括第一金属层，电阻层和钝化层的基本单元; 沉积绝缘介电层，并使绝缘介电层变平; 蚀刻绝缘介电层和钝化层以形成对应于基本单元的接触孔; 在接触孔中填充金属丝; 形成第二金属层。 根据上述方法，可以在整个晶片上形成均匀分布的电阻。

公开(公告)号：US20150126014A1

公开(公告)日：2015-05-07

申请号：US14355500

申请日：2012-10-22

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Tsung-Nten Hsu ,  Zhaoyu Yang ,  Zhiyong Zhao ,  Chunshan Lu

IPC: H01L45/00

CPC classification number: H01L45/1633 ,  H01L45/04 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1675 ,  H01L45/1683

Abstract: A manufacturing method of a resistive random access storage unit, includes: forming a resistance layer on a first metal layer having a flat surface; forming a passivation layer on the resistance layer; performing an etching process to obtain a plurality of basic units, a basic unit comprising a first metal layer, a resistance layer, and a passivation layer, which are laminated sequentially; depositing a insulating dielectric layer, and flattening the insulating dielectric layer; etching the insulating dielectric layer and the passivation layer to form contacting holes corresponded to the basic units; filling metal wires in the contacting holes; forming a second metal layer. According to the above method, a uniformly distributed resistance can be formed on a whole wafer.

Abstract translation: 一种电阻随机存取存储单元的制造方法，包括：在具有平坦表面的第一金属层上形成电阻层; 在电阻层上形成钝化层; 执行蚀刻处理以获得多个基本单元，包括依次层叠的包括第一金属层，电阻层和钝化层的基本单元; 沉积绝缘介电层，并使绝缘介电层变平; 蚀刻绝缘介电层和钝化层以形成对应于基本单元的接触孔; 在接触孔中填充金属丝; 形成第二金属层。 根据上述方法，可以在整个晶片上形成均匀分布的电阻。