公开(公告)号：US20240222478A1

公开(公告)日：2024-07-04

申请号：US18558422

申请日：2022-01-24

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Sen ZHANG ,  Yan GU ,  Siyu CHEN

IPC: H01L29/739 ,  H01L27/07 ,  H01L29/423 ,  H01L29/866

CPC classification number: H01L29/7394 ,  H01L27/0727 ,  H01L29/4236 ,  H01L29/866

Abstract: A reverse conducting lateral insulated-gate bipolar transistor includes a drift region formed on a substrate, a gate located on the drift region, an emitter region located on the drift region and close to one side of the gate, and a collector region located on the drift region and away from one side of the gate. Two or more N-well regions arranged at intervals are provided on the side of the drift region where the collector region is located. A P-well region is provided between the two or more N-well regions arranged at intervals; a P+ contact region is provided on the N-well region; an N+ contact region is provided on the P-well region; both the P+ contact region and the N+ contact region are conductively connected to a collector lead-out end.