公开(公告)号：US12165714B2

公开(公告)日：2024-12-10

申请号：US17916927

申请日：2021-04-28

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Bin Chen ,  Youhui Li ,  Ming Gu ,  Xinmiao Zhao ,  Hao Wang ,  Shuming Guo ,  Zongchuan Wang ,  Nan Zhang

IPC: G11C16/04 ,  G11C16/26 ,  G11C16/30

Abstract: A semiconductor memory, comprising a negative voltage providing unit, which is used for providing a first negative voltage to a word line during a read operation, and comprises: a clamping unit that comprises an input end, a control end and an output end, wherein the input end is coupled to a common ground end of the memory, and the control end is used for receiving a first signal; an energy storage capacitor, a first end of which is coupled to the output end, and a second end that is used for receiving a second signal; and a negative voltage providing end which is coupled to the first end, wherein the clamping unit is used for: pulling the voltage at the output end to the voltage at the input end when the first signal is “0”; and clamping the output end at a clamping voltage when the first signal is “1”.