公开(公告)号：US20210036150A1

公开(公告)日：2021-02-04

申请号：US16645139

申请日：2018-09-01

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Nailong HE ,  Sen ZHANG ,  Xuchao LI

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/762 ,  H01L29/06

Abstract: A lateral double-diffused metal oxide semiconductor component and a manufacturing method therefor. The lateral double-diffused metal oxide semiconductor component comprises: a semiconductor substrate, the semiconductor substrate being provided thereon with a drift area; the drift area being provided therein with a trap area and a drain area, the trap area being provided therein with an active area and a channel; the drift area being provided therein with a deep trench isolation structure arranged between the trap area and the drain area, and the deep trench isolation structure being provided at the bottom thereof with alternately arranged first p-type injection areas and first n-type injection areas.