公开(公告)号：US20140329385A1

公开(公告)日：2014-11-06

申请号：US14351828

申请日：2012-10-12

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD

Inventor： Hsiao-Chia Wu ,  Shilin Fang ,  Tse-Huang Lo ,  Zhengpei Chen ,  Shu Zhang

IPC: H01L21/768

CPC classification number: H01L21/7685 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/76837 ,  H01L21/76838 ,  H01L24/03

Abstract: A method for manufacturing a semiconductor thick metal structure includes a thick metal deposition step, a metal patterning step, and a passivation step. In the thick metal deposition step, a Ti—TiN laminated structure is used as an anti-reflection layer to implement 4 μm metal etching without residue. In the metal patterning step, N2 is used for the protection of a sidewall to implement on a 4 μm metal concave-convex structure a tilt angle of nearly 90 degrees, and a main over-etching step is added to implement the smoothness of the sidewall of the 4 μm metal concave-convex structure. A half-filled passivation filling structure is used to implement effective passivation protection of 1.5 um metal gaps having less than 4 um of metal thickness. Manufacturing of the 4 μm thick metal structure having a linewidth/gap of 1.5 μm/1.5 μm is finally implemented.

Abstract translation: 一种制造半导体厚金属结构体的方法包括厚金属沉积步骤，金属图案化步骤和钝化步骤。 在厚金属沉积步骤中，使用Ti-TiN层压结构作为抗反射层，以实现无残留的4μm金属蚀刻。 在金属图案化步骤中，使用N 2来保护侧壁以在接近90度的倾斜角度的4μm金属凹凸结构上实施，并且添加主过蚀刻步骤以实现侧壁的平滑度 的4μm金属凹凸结构。 使用半填充钝化填充结构来实现具有小于4μm的金属厚度的1.5um金属间隙的有效钝化保护。 最终实现线宽/间隙为1.5μm/1.5μm的4μm厚的金属结构体的制造。

公开(公告)号：US08956972B2

公开(公告)日：2015-02-17

申请号：US14351828

申请日：2012-10-12

Applicant: CSMC Technologies Fab1 Co., Ltd.

Inventor： Hsiao-Chia Wu ,  Shilin Fang ,  Tse-Huang Lo ,  Zhengpei Chen ,  Shu Zhang

IPC: H01L21/44 ,  H01L21/768

CPC classification number: H01L21/7685 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/76837 ,  H01L21/76838 ,  H01L24/03

Abstract: A method for manufacturing a semiconductor thick metal structure includes a thick metal deposition step, a metal patterning step, and a passivation step. In the thick metal deposition step, a Ti—TiN laminated structure is used as an anti-reflection layer to implement 4 μm metal etching without residue. In the metal patterning step, N2 is used for the protection of a sidewall to implement on a 4 μm metal concave-convex structure a tilt angle of nearly 90 degrees, and a main over-etching step is added to implement the smoothness of the sidewall of the 4 μm metal concave-convex structure. A half-filled passivation filling structure is used to implement effective passivation protection of 1.5 um metal gaps having less than 4 um of metal thickness. Manufacturing of the 4 μm thick metal structure having a linewidth/gap of 1.5 μm/1.5 μm is finally implemented.

Abstract translation: 一种制造半导体厚金属结构体的方法包括厚金属沉积步骤，金属图案化步骤和钝化步骤。 在厚金属沉积步骤中，使用Ti-TiN层压结构作为抗反射层，以实现无残留的4μm金属蚀刻。 在金属图案化步骤中，使用N 2来保护侧壁以在接近90度的倾斜角度的4μm金属凹凸结构上实施，并且添加主过蚀刻步骤以实现侧壁的平滑度 的4μm金属凹凸结构。 使用半填充钝化填充结构来实现具有小于4μm的金属厚度的1.5um金属间隙的有效钝化保护。 最终实现线宽/间隙为1.5μm/1.5μm的4μm厚的金属结构体的制造。