公开(公告)号：US09040410B2

公开(公告)日：2015-05-26

申请号：US14130482

申请日：2013-05-10

Applicant: CSMC Technologies Fab2 Co., Ltd.

Inventor： Xin Yang

IPC: H01L23/544 ,  G03F7/20 ,  G03F9/00 ,  H01L21/00

CPC classification number: H01L23/544 ,  G03F7/20 ,  G03F9/708 ,  H01L21/00 ,  H01L2223/54433 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A fabrication method for semiconductor devices is provided. The method comprises: depositing a dielectric layer that includes a plurality of functional layers, and forming a contact hole, or through hole, and a metal layer. The forming of the contact hole, or through hole, and the metal layer comprises performing photolithography on regions corresponding to a marking label for the photolithography of the dielectric layer and the metal layer. On at least one of the functional layers, the performing photolithography on regions corresponding to a marking label for the photolithography comprises limiting the photolithography to the metal layer thereof. A semiconductor device thus fabricated is also provided. The method and device do not affect the reading of the marking label, and also can avoid the problem of defocusing in the vicinity of the marking label.

Abstract translation: 提供了半导体器件的制造方法。 该方法包括：沉积包括多个功能层的介电层，以及形成接触孔或通孔以及金属层。 接触孔或通孔以及金属层的形成包括在对应于用于电介质层和金属层的光刻的标记标签的区域上进行光刻。 在至少一个功能层上，对应于用于光刻的标记标签的区域上的执行光刻包括将光刻限制到其金属层。 还提供了如此制造的半导体器件。 该方法和装置不影响标记标签的读数，也可以避免标记标签附近散焦的问题。

公开(公告)号：US20140145354A1

公开(公告)日：2014-05-29

申请号：US14130482

申请日：2013-05-10

Applicant: CSMC Technologies Fab2 Co., Ltd.

Inventor： Xin Yang

IPC: H01L23/544

CPC classification number: H01L23/544 ,  G03F7/20 ,  G03F9/708 ,  H01L21/00 ,  H01L2223/54433 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A fabrication method for semiconductor devices is provided. The method comprises: depositing a dielectric layer that includes a plurality of functional layers, and forming a contact hole, or through hole, and a metal layer. The forming of the contact hole, or through hole, and the metal layer comprises performing photolithography on regions corresponding to a marking label for the photolithography of the dielectric layer and the metal layer. On at least one of the functional layers, the performing photolithography on regions corresponding to a marking label for the photolithography comprises limiting the photolithography to the metal layer thereof. A semiconductor device thus fabricated is also provided. The method and device do not affect the reading of the marking label, and also can avoid the problem of defocusing in the vicinity of the marking label.

Abstract translation: 提供了半导体器件的制造方法。 该方法包括：沉积包括多个功能层的介电层，以及形成接触孔或通孔以及金属层。 接触孔或通孔以及金属层的形成包括在对应于用于电介质层和金属层的光刻的标记标签的区域上进行光刻。 在至少一个功能层上，对应于用于光刻的标记标签的区域上的执行光刻包括将光刻限制到其金属层。 还提供了如此制造的半导体器件。 该方法和装置不影响标记标签的读数，也可以避免标记标签附近散焦的问题。