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公开(公告)号：US09305687B2
公开(公告)日：2016-04-05
申请号：US14292325
申请日：2014-05-30
Applicant: CYNTEC CO., LTD.
Inventor： Hsing-Kai Cheng , Yu-Jen Lin , Yen-Ting Lin , Ta-Wen Lo
Abstract: A resistor device includes a resistor plate having opposite first and second surfaces; a first metal layer including first and second portions which are disposed on the first surface of the resistor plate at opposite first and second sides, respectively; and a second metal layer including a first sensing pad, a second sensing pad, a first current pad and a second current pad, separate from one another, wherein the first sensing pad and the first current pad are disposed on the first portion of the first metal layer and the second sensing pad and the second current pad are disposed on the second portion of the first metal layer. A protective layer is preferably provided, overlying the resistor plate and the first metal layer uncovered by the second metal layer.
Abstract translation: 电阻器装置包括具有相反的第一和第二表面的电阻器板; 第一金属层，包括第一和第二部分，其分别在相反的第一和第二侧设置在电阻器板的第一表面上; 以及第二金属层，其包括彼此分离的第一感测焊盘，第二感测焊盘，第一电流焊盘和第二电流焊盘，其中所述第一感测焊盘和所述第一电流焊盘设置在所述第一 金属层和第二感测焊盘和第二电流焊盘设置在第一金属层的第二部分上。 优选地设置保护层，覆盖电阻器板和未被第二金属层覆盖的第一金属层。
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Patent Agency Ranking
公开(公告)号：US09704623B2
公开(公告)日：2017-07-11
申请号：US14864821
申请日：2015-09-24
Applicant: CYNTEC CO., LTD.
Inventor： Huang-Chou Chen , Ta-Wen Lo , Chun-Cheng Yao
Abstract: A micro-resistor includes a resistor material layer, an electrode set and a first protective layer. The electrode set includes a first electrode and a second electrode to define an opening which exposes the resistor material layer. A space between the first electrode and the second electrode represents an opening size. The first protective layer covers the opening completely and has a coverage size along a direction parallel with the space. The micro-resistor has a resistance of less than 5 milliohm and the difference of the opening size and the coverage size is less than 3100 micrometer to make the temperature coefficient of electrical resistance of the micro-resistor not greater than 150 ppm/° C.
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公开(公告)号：US20140266568A1
公开(公告)日：2014-09-18
申请号：US14292325
申请日：2014-05-30
Applicant: CYNTEC CO. LTD.
Inventor： Hsing-Kai CHENG , Yu-Jen Lin , Yen-Ting Lin , Ta-Wen Lo
IPC: H01C1/012
Abstract: A resistor device includes a resistor plate having opposite first and second surfaces; a first metal layer including first and second portions which are disposed on the first surface of the resistor plate at opposite first and second sides, respectively; and a second metal layer including a first sensing pad, a second sensing pad, a first current pad and a second current pad, separate from one another, wherein the first sensing pad and the first current pad are disposed on the first portion of the first metal layer and the second sensing pad and the second current pad are disposed on the second portion of the first metal layer. A protective layer is preferably provided, overlying the resistor plate and the first metal layer uncovered by the second metal layer.
Abstract translation: 电阻器装置包括具有相反的第一和第二表面的电阻器板; 第一金属层，包括第一和第二部分，其分别在相反的第一和第二侧设置在电阻器板的第一表面上; 以及第二金属层，其包括彼此分离的第一感测焊盘，第二感测焊盘，第一电流焊盘和第二电流焊盘，其中所述第一感测焊盘和所述第一电流焊盘设置在所述第一 金属层和第二感测焊盘和第二电流焊盘设置在第一金属层的第二部分上。 优选地设置保护层，覆盖电阻器板和未被第二金属层覆盖的第一金属层。
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公开(公告)号：US20170018340A1
公开(公告)日：2017-01-19
申请号：US14864821
申请日：2015-09-24
Applicant: CYNTEC CO., LTD.
Inventor： Huang-Chou Chen , Ta-Wen Lo , Chun-Cheng Yao
Abstract: A micro-resistor includes a resistor material layer, an electrode set and a first protective layer. The electrode set includes a first electrode and a second electrode to define an opening which exposes the resistor material layer. A space between the first electrode and the second electrode represents an opening size. The first protective layer covers the opening completely and has a coverage size along a direction parallel with the space. The micro-resistor has a resistance of less than 5 milliohm and the difference of the opening size and the coverage size is less than 3100 micrometer to make the temperature coefficient of electrical resistance of the micro-resistor not greater than 150 ppm/° C.
Abstract translation: 微电阻器包括电阻材料层，电极组和第一保护层。 电极组包括第一电极和第二电极，以限定露出电阻材料层的开口。 第一电极和第二电极之间的间隔表示开口尺寸。 第一保护层完全覆盖开口，并且沿与空间平行的方向具有覆盖尺寸。 微电阻器的电阻小于5毫欧姆，开口尺寸和覆盖尺寸之差小于3100微米，使微电阻器的电阻温度系数不大于150 ppm /℃。
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公开(公告)号：US08871049B2
公开(公告)日：2014-10-28
申请号：US13681435
申请日：2012-11-20
Applicant: Cyntec Co., Ltd.
Inventor： Ta-Wen Lo
Abstract: A method of manufacturing a resistor includes steps of providing a resistance material and two electrode materials, wherein a reflectivity of the resistance material is smaller than a reflectivity of the electrode material; fixing the two electrode materials at opposite sides of the resistance material; and welding two first junctions between the resistance material and the two electrode materials by a first laser from a first side of the resistance material, wherein a beam area from the first laser to the resistance material is larger than a beam area from the first laser to the electrode material.
Abstract translation: 制造电阻器的方法包括提供电阻材料和两种电极材料的步骤，其中电阻材料的反射率小于电极材料的反射率; 在电阻材料的相对侧固定两个电极材料; 以及通过来自所述电阻材料的第一侧的第一激光焊接所述电阻材料和所述两个电极材料之间的两个第一结，其中，从所述第一激光到所述电阻材料的光束面积大于从所述第一激光到第 电极材料。
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公开(公告)号：US20130133826A1
公开(公告)日：2013-05-30
申请号：US13681435
申请日：2012-11-20
Applicant: CYNTEC CO., LTD.
Inventor： Ta-Wen Lo
IPC: H01C17/28
Abstract: A method of manufacturing a resistor includes steps of providing a resistance material and two electrode materials, wherein a reflectivity of the resistance material is smaller than a reflectivity of the electrode material; fixing the two electrode materials at opposite sides of the resistance material; and welding two first junctions between the resistance material and the two electrode materials by a first laser from a first side of the resistance material, wherein a beam area from the first laser to the resistance material is larger than a beam area from the first laser to the electrode material.
Abstract translation: 制造电阻器的方法包括提供电阻材料和两种电极材料的步骤，其中电阻材料的反射率小于电极材料的反射率; 在电阻材料的相对侧固定两个电极材料; 以及通过来自所述电阻材料的第一侧的第一激光焊接所述电阻材料和所述两个电极材料之间的两个第一结，其中，从所述第一激光到所述电阻材料的光束面积大于从所述第一激光到第 电极材料。
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