Chip resistor and method for manufacturing chip resistor

    公开(公告)号:US11798714B2

    公开(公告)日:2023-10-24

    申请号:US17828276

    申请日:2022-05-31

    Inventor: Naoto Oka

    CPC classification number: H01C17/006 H01C1/142 H01C7/003

    Abstract: Resistive elements are formed in belt shape in regions sandwiched between secondary division prediction lines set onto a large substrate and extending in a direction orthogonal to primary division prediction lines, a plurality of front electrodes disposed facing each other at predetermined intervals on the resistive elements are formed so as to be across the primary division prediction lines, a glass coat layer covering each of the resistive elements and extending in the direction orthogonal to the secondary division prediction lines is formed, a resin coat layer covering an entire surface of the large substrate from a top of the glass coat layer is formed, and after that, the large substrate is diced along the primary division prediction lines and the secondary division prediction lines to obtain individual chip base bodies.

    THICK FILM RESISTOR PASTE, THICK FILM RESISTOR, AND ELECTRONIC COMPONENT

    公开(公告)号:US20230170114A1

    公开(公告)日:2023-06-01

    申请号:US17922110

    申请日:2021-04-30

    Inventor: Masaki Ando

    CPC classification number: H01C17/0654 H01C7/003

    Abstract: To provide a thick film resistor paste for a resistor having a smaller resistance change rate and excellent surge resistance, a thick film resistor using the thick film resistor paste, and an electronic component provided with the thick film resistor. A thick film resistor paste comprises a lead-ruthenate-containing glass powder and an organic vehicle, the lead-ruthenate-containing glass powder comprises 10 to 70 mass % of lead ruthenate, a glass composition of the lead-ruthenate-containing glass powder comprises 3 to 30 mass % of silicon oxide, 30 to 90 mass % of lead oxide. 5 to 50 mass % of boron oxide relative to 100 mass % of glass components, and, a combined amount of silicon oxide, lead oxide and boron oxide by mass % is 50 mass % or more relative to 100 mass % of the glass components.

    Chip component
    3.
    发明授权

    公开(公告)号:US11657932B2

    公开(公告)日:2023-05-23

    申请号:US17752200

    申请日:2022-05-24

    Inventor: Naoto Oka

    CPC classification number: H01C7/003 H01C1/142

    Abstract: A chip resistor including: a rectangular parallelepiped insulating substrate; a strip-shaped resistor; a pair of front electrodes formed on a front surface of the resistor at both ends in the longitudinal direction; an insulating protective layer; and a pair of end face electrodes formed at both ends of the insulating substrate in the longitudinal direction, each of which is connected to each end face of the resistor, corresponding one of the front electrodes, and protective film; and a pair of external electrodes, wherein a cross-sectional shape of each of the front electrodes is almost a triangle in which a side of the end face has a maximum height, and a shape of an end face of each of the end face electrodes is almost a square.

    Temperature Sensor Element
    4.
    发明申请

    公开(公告)号:US20180254129A1

    公开(公告)日:2018-09-06

    申请号:US15913226

    申请日:2018-03-06

    Inventor: Ryusuke SUZUKI

    Abstract: A resistance pattern and a pair of internal electrodes are formed on a main face of a cuboidal insulating substrate. The pair of internal electrodes are connected to opposite end portions of the resistance pattern. A surface glass film is formed to cover the entire main face including a pair of lead wires and a protective film. The pair of lead wires are bonded to the internal electrodes and protrude outward from the insulating substrate. The protective film is formed on the resistance pattern. The surface glass film extends over a region covering respective upper-side faces of the insulating substrate adjacent to the main face. The total dimension (T+D) is (T+D)≈W. T: a thickness of the insulating substrate, D: a wire diameter of each of the lead wires, W: a width of the insulating substrate along a lateral direction.

    Chip Resistor
    7.
    发明申请
    Chip Resistor 审中-公开

    公开(公告)号:US20180158578A1

    公开(公告)日:2018-06-07

    申请号:US15572847

    申请日:2016-04-11

    Abstract: Provided is a chip resistor in which cracks, fracture, etc. can be surely prevented from occurring due to thermal stress in solder bonding portions. The chip resistor 1 includes: a ceramic substrate 2 that is shaped like a cuboid; a pair of front electrodes 3 that are provided on lengthwise opposite end portions of a front surface of the ceramic substrate 2; a resistor body 4 that is provided between and connected to the two front electrodes 3; a protective layer 5 that covers the resistor body 4; a pair of back electrodes 6 that are provided on lengthwise opposite end portions of a back surface of the ceramic substrate 2; end-surface electrodes 7 through which the front electrodes 3 and the back electrodes 6 are electrically conductively connected to each other respectively; external electrodes 8 that cover the end-surface electrodes 7; and a pair of insulating resin layers 9 that are provided to cover edge portions of the back electrodes 6; wherein: the pair of insulating resin layers 9 are opposed to each other with interposition of a predetermined interval therebetween on the back surface of the ceramic substrate 2; and at least opposed side end portions of the insulating resin layers 9 are exposed from the external electrodes 8.

    CHIP RESISTOR
    8.
    发明申请
    CHIP RESISTOR 审中-公开

    公开(公告)号:US20170271054A1

    公开(公告)日:2017-09-21

    申请号:US15611282

    申请日:2017-06-01

    Applicant: ROHM CO., LTD.

    CPC classification number: H01C1/142 H01C1/148 H01C7/003 H01C17/006 H01C17/24

    Abstract: A chip resistor includes a base member, a resistive element formed on the base member, a first inner electrode held in contact with a first end portion of the resistive element, a second inner electrode held in contact with a second end portion of the resistive element, a first reverse surface electrode reaching a first end portion of the base member, and a second reverse surface electrode reaching a second end portion of the base member. The length of the first and the second reverse surface electrodes is in a range of 2/10 to 3/10 of the length of the base member. Also, the length of the first and the second reverse surface electrodes is greater than the length of the first and the second inner electrodes.

    RESISTIVE ELEMENT AND METHOD FOR MANUFACTURING THE SAME
    10.
    发明申请
    RESISTIVE ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
    电阻元件及其制造方法

    公开(公告)号:US20160358701A1

    公开(公告)日:2016-12-08

    申请号:US15102711

    申请日:2014-11-19

    Abstract: A method for manufacturing a chip resistive element including a substrate, a resistor formed on the substrate, and electrodes connected to opposite ends of the resistor, the method including an electrode forming step of forming the electrodes on the substrate. The electrode forming step includes a step of forming a first electrode layer on the substrate using a first electrode material containing silver, and a step of forming a second electrode layer on the first electrode layer using a second electrode material containing silver and palladium. The first electrode material has a higher silver content than the second electrode material.

    Abstract translation: 一种用于制造芯片电阻元件的方法,该芯片电阻元件包括基板,形成在基板上的电阻器和连接到电阻器的相对端的电极,该方法包括在基板上形成电极的电极形成步骤。 电极形成步骤包括使用包含银的第一电极材料在基板上形成第一电极层的步骤,以及使用含有银和钯的第二电极材料在第一电极层上形成第二电极层的步骤。 第一电极材料具有比第二电极材料更高的银含量。

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