Integrated terahertz imaging systems
    2.
    发明授权
    Integrated terahertz imaging systems 有权
    集成太赫兹成像系统

    公开(公告)号:US09269731B2

    公开(公告)日:2016-02-23

    申请号:US14150670

    申请日:2014-01-08

    摘要: A low-power 4×4-pixel THz camera with responsivity greater than 2.5 MV/W and sub-10 pW/√Hz NEP at 0.25 THz is integrated in 130 nm silicon without using either high-resistivity substrates or silicon lenses. Imaging results with a fully integrated radiating CMOS power source demonstrate the first entirely silicon-based THz imager.

    摘要翻译: 响应度大于2.5MV / W的低功率4×4像素的THz相机和0.25THz的10pW /√HzNEP集成在130nm硅中,而不使用高电阻率基板或硅透镜。 完全集成的辐射CMOS电源的成像结果证明了第一个完全基于硅的THz成像器。

    INTEGRATED TERAHERTZ IMAGING SYSTEMS
    3.
    发明申请
    INTEGRATED TERAHERTZ IMAGING SYSTEMS 有权
    集成的TERAHERTZ成像系统

    公开(公告)号:US20140367575A1

    公开(公告)日:2014-12-18

    申请号:US14150670

    申请日:2014-01-08

    IPC分类号: H01L27/146

    摘要: A low-power 4×4-pixel THz camera with responsivity greater than 2.5 MV/W and sub-10 pW/√Hz NEP at 0.25 THz is integrated in 130 nm silicon without using either high-resistivity substrates or silicon lenses. Imaging results with a fully integrated radiating CMOS power source demonstrate the first entirely silicon-based THz imager.

    摘要翻译: 响应度大于2.5MV / W的低功率4×4像素的THz相机和0.25THz的10pW /√HzNEP集成在130nm硅中,而不使用高电阻率基板或硅透镜。 完全集成的辐射CMOS电源的成像结果证明了第一个完全基于硅的THz成像器。