公开(公告)号：US20140283906A1

公开(公告)日：2014-09-25

申请号：US14222540

申请日：2014-03-21

Applicant: California Institute of Technology

Inventor： Harry A. Atwater ,  Michael Deceglie

IPC: H01L31/0224

CPC classification number: H01L31/02021 ,  H01L31/02167 ,  H01L31/068 ,  Y02E10/547

Abstract: A semiconductor photovoltaic device with an absorber layer for absorbing incident light, and a light transmitting layer located on the semiconductor body. The light transmitting layer induces an inversion layer in the semiconductor body and the current collected at the inversion layer is transported to a conductive electrode spaced from the light transmitting layer on the semiconductor body.

Abstract translation: 具有吸收入射光的吸收层的半导体光电器件和位于半导体本体上的透光层。 透光层在半导体本体中引起反转层，并且将反转层收集的电流传输到与半导体本体上的透光层间隔开的导电电极。