公开(公告)号：US20030205704A1

公开(公告)日：2003-11-06

申请号：US09825875

申请日：2001-04-03

Applicant: California Institute of Technology, a California corporation

Inventor： Sarath D. Gunapala ,  John K. Liu ,  Jin S. Park ,  True-Lon Lin ,  Mani Sundaram

IPC: H01L047/02

CPC classification number: B82Y20/00 ,  G01J5/28 ,  H01L31/035236 ,  Y10S977/759 ,  Y10S977/761 ,  Y10S977/915 ,  Y10S977/927

Abstract: An AlxGa1nullxAs/GaAs/AlxGa1nullxAs quantum well exhibiting a bound-to-quasibound intersubband absorptive transition is described. The bound-to-quasibound transition exists when the first excited state has the same energy as the nulltopnull (i.e., the upper-most energy barrier) of the quantum well. The energy barrier for thermionic emission is thus equal to the energy required for intersubband absorption. Increasing the energy barrier in this way reduces dark current. The amount of photocurrent generated by the quantum well is maintained at a high level.

Abstract translation: 描述了表现出界限对准的子带间吸收转变的Al x Ga 1-x As / GaAs / Al x Ga 1-x As量子阱。 当第一激发态具有与量子阱的“顶部”（即，最上面的能量势垒）相同的能量时，存在边界到准近渡的转变。 因此，热离子发射的能量势垒等于子带间吸收所需的能量。 以这种方式增加能量屏障可以减少暗电流。 由量子阱产生的光电流的量保持在高水平。