Structure, fabrication, and corrective test of electron-emitting device having electrode configured to reduce cross-over capacitance and/or facilitate short-circuit repair
    1.
    发明申请
    Structure, fabrication, and corrective test of electron-emitting device having electrode configured to reduce cross-over capacitance and/or facilitate short-circuit repair 失效
    具有电极的电子发射器件的结构,制造和校正测试被配置为减少交叉电容和/或促进短路修复

    公开(公告)号:US20030107311A1

    公开(公告)日:2003-06-12

    申请号:US10017656

    申请日:2001-12-12

    CPC classification number: H01J3/022

    Abstract: An electron-emitting device (20, 70, 80, or 90) contains an electrode, either a control electrode (38) or an emitter electrode (32), having a specified portion situated off to the side of the bulk of the electrode. For a control electrode, the specified portion is an exposure portion (38EA or 38EB) having openings that expose electron-emissive elements (50A or 50B) situated over an emitter electrode. For an emitter electrode, the specified portion is an emitter-coupling portion situated below at least one electron-emissive element exposed through at least one opening in a control electrode. Configuring the device in this way enables the control-electrode-to-emitter-electrode capacitance to be quite small, thereby enhancing the device's switching speed. If the specified portion of the electrode becomes short circuited to the other electrode, the short-circuit defect can be removed by severing the specified portion from the remainder of its electrode.

    Abstract translation: 电子发射器件(20,70,80或90)包含电极,控制电极(38)或发射极(32),其具有位于电极本体侧面的特定部分。 对于控制电极,指定部分是具有露出位于发射极上方的电子发射元件(50A或50B)的开口的曝光部分(38EA或38EB)。 对于发射电极,指定的部分是位于通过控制电极中的至少一个开口暴露的至少一个电子发射元件下方的发射极耦合部分。 以这种方式配置器件使控制电极对发射极之间的电容非常小,从而提高器件的开关速度。 如果电极的指定部分与另一个电极短路,则可以通过从电极的其余部分切断指定部分来消除短路缺陷。

Patent Agency Ranking