-
公开(公告)号:US20080245770A1
公开(公告)日:2008-10-09
申请号:US12089899
申请日:2006-10-11
IPC分类号: C23C16/00 , H01L21/306 , B44C1/22
CPC分类号: H01L21/306 , B44C1/227 , C23C16/455 , C23C16/45544 , C23C16/45589 , H01L21/6719 , H01L21/67207
摘要: A substrate processing system as illustrated at (1). A substrate (2) lies upon a piston (3) shown in both the loading position (3a) and in a processing position (3b). The substrate is loaded via a port (4) through a door (5). The loading area (7a), and/or the hole chamber (7) may be pumped out via a vacuum exhaust pipe (6) connected to a pump (not shown). A linear drive mechanism shown diagrammatically at (8) lifts the piston and the substrate in the chamber such that a process volume (7b) of the chamber is defined with poor gas conduction between the piston and the walls of the chamber.
摘要翻译: (1)所示的基板处理系统。 基板(2)位于在装载位置(3a)和加工位置(3b)中示出的活塞(3)上。 基板通过端口(4)通过门(5)装载。 可以通过连接到泵(未示出)的真空排气管(6)将装载区域(7a)和/或孔室(7)泵出。 在(8)处示意地示出的线性驱动机构将活塞和基板提升到室中,使得腔室的处理体积(7b)被限定为在活塞和室壁之间的差的气体传导。