公开(公告)号：US20140165236A1

公开(公告)日：2014-06-12

申请号：US14137731

申请日：2013-12-20

Applicant: Carl Zeiss SMS GmbH

Inventor： Michael Budach ,  Tristan Bret ,  Klaus Edinger ,  Thorsten Hofmann

IPC: G01Q30/02

CPC classification number: G01Q30/02 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/22 ,  G03F1/84 ,  G03F1/86

Abstract: The invention refers to a method for analyzing a defect of an optical element for the extreme ultra-violet wavelength range comprising at least one substrate and at least one multi-layer structure, the method comprising the steps: (a) determining first data by exposing the defect to ultra-violet radiation, (b) determining second data by scanning the defect with a scanning probe microscope, (c) determining third data by scanning the defect with a scanning particle microscope, and (d) com-bining the first, the second and the third data.

Abstract translation: 本发明涉及用于分析包括至少一个基底和至少一个多层结构的用于极紫外波长范围的光学元件的缺陷的方法，所述方法包括以下步骤：（a）通过曝光来确定第一数据 （b）通过用扫描探针显微镜扫描缺陷来确定第二数据，（c）通过用扫描粒子显微镜扫描缺陷来确定第三数据，以及（d）将第一数据， 第二和第三个数据。

公开(公告)号：US20140255831A1

公开(公告)日：2014-09-11

申请号：US14200264

申请日：2014-03-07

Applicant: Carl Zeiss SMS GmbH

Inventor： Thorsten Hofmann ,  Tristan Bret ,  Petra Spies ,  Nicole Auth ,  Michael Budach ,  Dajana Cujas

IPC: G03F1/72

CPC classification number: G03F1/72

Abstract: The invention refers to a method and apparatus for protecting a substrate during a processing by at least one particle beam. The method comprises the following steps: (a) applying a locally restrict limited protection layer on the substrate; (b) etching the substrate and/or a layer arranged on the substrate by use of the at least one particle beam and at least one gas; and/or (c) depositing material onto the substrate by use of the at least one particle beam and at least one precursor gas; and (d) removing the locally limited protection layer from the substrate.

Abstract translation: 本发明涉及用于通过至少一个粒子束在处理期间保护衬底的方法和装置。 该方法包括以下步骤：（a）在基板上施加局部限制的有限保护层; （b）通过使用至少一个粒子束和至少一种气体来蚀刻衬底和/或布置在衬底上的层; 和/或（c）通过使用所述至少一个粒子束和至少一种前体气体将材料沉积到所述衬底上; 和（d）从衬底去除局部限制的保护层。