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公开(公告)号：US08546776B2
公开(公告)日：2013-10-01
申请号：US13713978
申请日：2012-12-13
申请人： Carl Zeiss SMT GmbH
IPC分类号： G21K5/04
CPC分类号： G21K5/04 , G03F7/70233 , G03F7/70916
摘要： To prevent reflective optical elements (2) for EUV lithography from becoming electrically charged as they are irradiated with EUV radiation (4), an optical system for EUV lithography is proposed, having a reflective optical element (2), including a substrate (21) with a highly reflective coating (22) emitting secondary electrons when irradiated with EUV radiation (4), and a source (3) of electrically charged particles, which is arranged in such a manner that electrically charged particles are applied to the reflective optical element (2), wherein the source (3) for the charge carrier compensation is exclusively a flood gun applying electrons to the reflective optical element (2).
摘要翻译： 为了防止EUV光刻反射的光学元件（2）在被EUV辐射（4）照射时变得带电，提出了一种用于EUV光刻的光学系统，其具有包括衬底（21）的反射光学元件（2） 具有当用EUV辐射（4）照射时发射二次电子的高反射涂层（22）和带电粒子源（3），其以带电粒子的形式施加到反射光学元件（ 2），其中用于电荷载体补偿的源极（3）仅仅是向反射光学元件（2）施加电子的泛喷枪。
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2.发明授权公开(公告)号：US09170499B2
公开(公告)日：2015-10-27
申请号：US14563087
申请日：2014-12-08
申请人： Carl Zeiss SMT GmbH
发明人： Damian Fiolka , Manfred Maul , Markus Schwab , Wolfgang Seitz , Olaf Dittmann
CPC分类号： G03F7/70191 , G02B3/0056 , G02B5/1876 , G02B27/283 , G02B27/285 , G02B27/286 , G03F7/70566
摘要： The disclosure relates to an illumination system of a microlithographic projection exposure apparatus. The illumination system can include a depolarizer which in conjunction with a light mixing system disposed downstream in the light propagation direction at least partially causes effective depolarization of polarized light impinging on the depolarizer. The illumination system can also include a microlens array which is arranged upstream of the light mixing system in the light propagation direction. The microlens array can include a plurality of microlenses arranged with a periodicity. The depolarizer can be configured so that a contribution afforded by interaction of the depolarizer with the periodicity of the microlens array to a residual polarization distribution occurring in a pupil plane arranged downstream of the microlens array in the light propagation direction has a maximum degree of polarization of not more than 5%.
摘要翻译： 本公开涉及一种微光刻投影曝光装置的照明系统。 照明系统可以包括消偏振器，其与在光传播方向上设置的下游的光混合系统相结合，至少部分地引起偏振光对去偏振器的有效去极化。 照明系统还可以包括在光传播方向上布置在光混合系统的上游的微透镜阵列。 微透镜阵列可以包括以周期布置的多个微透镜。 去极化器可以被配置为使得通过去偏振器的相互作用提供的贡献与微透镜阵列的周期性对在光传播方向上布置在微透镜阵列下游的光瞳面中发生的残留极化分布产生的贡献具有最大极化度 不超过5％。
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公开(公告)号：US20150153654A1
公开(公告)日：2015-06-04
申请号：US14563087
申请日：2014-12-08
申请人： Carl Zeiss SMT GmbH
发明人： Damian Fiolka , Manfred Maul , Markus Schwab , Wolfgang Seitz , Olaf Dittmann
CPC分类号： G03F7/70191 , G02B3/0056 , G02B5/1876 , G02B27/283 , G02B27/285 , G02B27/286 , G03F7/70566
摘要： The disclosure relates to an illumination system of a microlithographic projection exposure apparatus. The illumination system can include a depolariser which in conjunction with a light mixing system disposed downstream in the light propagation direction at least partially causes effective depolarisation of polarised light impinging on the depolariser. The illumination system can also include a microlens array which is arranged upstream of the light mixing system in the light propagation direction. The microlens array can include a plurality of microlenses arranged with a periodicity. The depolariser can be configured so that a contribution afforded by interaction of the depolariser with the periodicity of the microlens array to a residual polarisation distribution occurring in a pupil plane arranged downstream of the microlens array in the light propagation direction has a maximum degree of polarisation of not more than 5%.
摘要翻译： 本公开涉及一种微光刻投影曝光装置的照明系统。 照明系统可以包括去极化器，其与在光传播方向上设置的下游的光混合系统相结合，至少部分地导致撞击在去极化器上的偏振光的有效去极化。 照明系统还可以包括在光传播方向上布置在光混合系统的上游的微透镜阵列。 微透镜阵列可以包括以周期布置的多个微透镜。 去极化器可以被配置为使得通过去极化器的相互作用提供的贡献与微透镜阵列的周期性对在光传播方向上布置在微透镜阵列的下游的光瞳面中发生的残留极化分布产生的贡献具有最大的偏振度 不超过5％。
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