Method For Manufacturing Probe Structure
    2.
    发明申请
    Method For Manufacturing Probe Structure 有权
    制造探针结构的方法

    公开(公告)号:US20080029479A1

    公开(公告)日:2008-02-07

    申请号:US11782949

    申请日:2007-07-25

    IPC分类号: B44C1/22

    CPC分类号: G01R3/00 G01R1/06727

    摘要: A method for manufacturing a probe structure is wherein a disclosed. In accordance with method, two semiconductor substrates having different crystal directions are bonded and selectively etched utilizing an etch selectivity due to the different crystal directions to form a probe tip region and a probe beam region. A cantilever structure for a probe card is formed by filling the probe tip region and the probe beam region with a conductive material.

    摘要翻译: 一种探针结构的制造方法,其中公开的。 根据方法,由于不同的晶体方向,使用具有不同晶体方向的两个半导体衬底被结合并选择性地蚀刻,以形成探针尖端区域和探针光束区域。 通过用导电材料填充探针尖端区域和探针束区域来形成用于探针卡的悬臂结构。

    Method for manufacturing probe structure
    3.
    发明授权
    Method for manufacturing probe structure 有权
    探针结构的制造方法

    公开(公告)号:US07824561B2

    公开(公告)日:2010-11-02

    申请号:US11782949

    申请日:2007-07-25

    IPC分类号: B44C1/22

    CPC分类号: G01R3/00 G01R1/06727

    摘要: A method for manufacturing a probe structure is disclosed. In accordance with the method, two semiconductor substrates having different crystal directions are bonded and selectively etched utilizing an etch selectivity due to the different crystal directions to form a probe tip region and a probe beam region. A cantilever structure for a probe card is formed by filling the probe tip region and the probe beam region with a conductive material.

    摘要翻译: 公开了一种用于制造探针结构的方法。 根据该方法,由于不同的晶体方向,使用具有不同晶体方向的两个半导体衬底被结合并选择性蚀刻,以形成探针尖端区域和探针光束区域。 通过用导电材料填充探针尖端区域和探针束区域来形成用于探针卡的悬臂结构。