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    SEMICONDUCTOR NANOWIRE SENSOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    1.
    发明申请
    SEMICONDUCTOR NANOWIRE SENSOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体纳米传感器器件及其制造方法

    公开(公告)号：US20100270530A1

    公开(公告)日：2010-10-28

    申请号：US12682571

    申请日：2008-07-24

    申请人： Chan Woo Park ,  Chang Geun Ahn ,  Jong Heon Yang ,  In Book Baek ,  Chil Seong Ah ,  Han Young Yu ,  An Soon Kim ,  Tae Youb Kim ,  Moon Gyu Jang ,  Myung Sim Jun

    发明人： Chan Woo Park ,  Chang Geun Ahn ,  Jong Heon Yang ,  In Book Baek ,  Chil Seong Ah ,  Han Young Yu ,  An Soon Kim ,  Tae Youb Kim ,  Moon Gyu Jang ,  Myung Sim Jun

    IPC分类号： H01L29/775 ,  H01L21/336

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y15/00 ,  H01L29/0673 ,  H01L29/78696

    摘要： A method for manufacturing a biosensor device is provided. The method involves forming a silicon nanowire channel with a line width of several nanometers to several tens of nanometers using a typical photolithography process, and using the channel to manufacture a semiconductor nanowire sensor device. The method includes etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the second conductivity-type channel on the second conductivity-type pad.

    摘要翻译： 提供一种制造生物传感器装置的方法。 该方法包括使用典型的光刻工艺形成线宽为几纳米至几十纳米的硅纳米线通道，并使用该通道制造半导体纳米线传感器装置。 该方法包括蚀刻作为绝缘体上硅（SOI）衬底的顶层的第一导电型单晶硅层，以形成第一导电型单晶硅线图案，掺杂第一导电型单晶硅线阵列的两个侧壁， 形成具有与第一导电类型相反的第二导电类型的杂质的单晶硅线图案，以形成第二导电型沟道，形成用于在第一导电型单晶的两端形成电极的第二导电型焊盘 硅线图案，在第一导电型单晶硅线图案的未掺杂区域中形成第一电极，用于施加反向偏置电压以使第一导电型单晶硅线图案和第二导电型 并且形成用于在第二导通型通道上施加偏置电压的第二电极 导电型垫。

    Semiconductor nanowire sensor device and method for manufacturing the same
    2.
    发明授权
    Semiconductor nanowire sensor device and method for manufacturing the same 有权
    半导体纳米线传感器装置及其制造方法

    公开(公告)号：US08241939B2

    公开(公告)日：2012-08-14

    申请号：US12682571

    申请日：2008-07-24

    申请人： Chan Woo Park ,  Chang Geun Ahn ,  Jong Heon Yang ,  In Bok Baek ,  Chil Seong Ah ,  Han Young Yu ,  An Soon Kim ,  Tae Youb Kim ,  Moon Gyu Jang ,  Myung Sim Jun

    发明人： Chan Woo Park ,  Chang Geun Ahn ,  Jong Heon Yang ,  In Bok Baek ,  Chil Seong Ah ,  Han Young Yu ,  An Soon Kim ,  Tae Youb Kim ,  Moon Gyu Jang ,  Myung Sim Jun

    IPC分类号： H01L21/00 ,  H01L29/06

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y15/00 ,  H01L29/0673 ,  H01L29/78696

    摘要： A method for manufacturing a biosensor includes forming a silicon nanowire channel, etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the second conductivity-type channel on the second conductivity-type pad.

    摘要翻译： 制造生物传感器的方法包括形成硅纳米线通道，蚀刻作为绝缘体上硅（SOI）衬底的顶层的第一导电型单晶硅层，以形成第一导电型单晶硅线 以与第一导电类型相反的第二导电类型的杂质掺杂第一导电型单晶硅线图案的两个侧壁以形成第二导电型沟道，形成第二导电型垫，用于在 第一导电型单晶硅线图案的两端，在第一导电型单晶硅线图案的未掺杂区域中形成用于施加反向偏置电压以使第一导电型单晶硅线型图案绝缘的第一电极 晶体硅线图案和第二导电型沟道，并且形成用于施加双面的第二电极 在第二导电型垫上的第二导电类型沟道上的电压。

    BIOSENSOR USING SILICON NANOWIRE AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    BIOSENSOR USING SILICON NANOWIRE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    使用硅纳米管的生物传感器及其制造方法

    公开(公告)号：US20090152598A1

    公开(公告)日：2009-06-18

    申请号：US12240114

    申请日：2008-09-29

    申请人： In Bok BAEK ,  Jong Heon Yang ,  Chang Geun Ahn ,  Han Young Yu ,  Chil Seong Ah ,  Chan Woo Park ,  An Soon Kim ,  Tae Youb Kim ,  Moon Gyu Jang ,  Myung Sim Jun

    发明人： In Bok BAEK ,  Jong Heon Yang ,  Chang Geun Ahn ,  Han Young Yu ,  Chil Seong Ah ,  Chan Woo Park ,  An Soon Kim ,  Tae Youb Kim ,  Moon Gyu Jang ,  Myung Sim Jun

    IPC分类号： H01L29/00 ,  H01L21/00

    CPC分类号： G01N27/4145 ,  G01N27/4146

    摘要： Provided are a biosensor using a silicon nanowire and a method of manufacturing the same. The silicon nanowire can be formed to have a shape, in which identical patterns are continuously repeated, to enlarge an area in which probe molecules are fixed to the silicon nanowire, thereby increasing detection sensitivity. In addition, the detection sensitivity can be easily adjusted by adjusting a gap between the identical patterns of the silicon nanowire depending on characteristics of target molecules, without adjusting a line width of the silicon nanowire in the conventional art. Further, the gap between the identical patterns of the silicon nanowire can be adjusted depending on characteristics of the target molecule to differentiate detection sensitivities, thereby simultaneously detecting various detection sensitivities.

    摘要翻译： 提供了使用硅纳米线的生物传感器及其制造方法。 可以将硅纳米线形成为具有连续重复相同图案的形状，以扩大探针分子固定在硅纳米线上的面积，从而提高检测灵敏度。 此外，通过根据目标分子的特性调整硅纳米线的相同图案之间的间隙，而不调整现有技术中的硅纳米线的线宽，可以容易地调整检测灵敏度。 此外，可以根据目标分子的特性来调整硅纳米线的相同图案之间的间隙，以区分检测灵敏度，从而同时检测各种检测灵敏度。