公开(公告)号：US06911715B2

公开(公告)日：2005-06-28

申请号：US10655820

申请日：2003-09-05

申请人： Chan-ho Park ,  Jin-myung Kim ,  Kyeong-seok Park ,  Dong-ho Hyun

发明人： Chan-ho Park ,  Jin-myung Kim ,  Kyeong-seok Park ,  Dong-ho Hyun

IPC分类号： H01L21/331 ,  H01L27/082 ,  H01L29/08 ,  H01L29/73 ,  H01L29/732 ,  H01L31/0336

CPC分类号： H01L29/0821 ,  H01L29/73 ,  H01L29/732

摘要： A bipolar transistor in which the occurrence of Kirk effect is suppressed when a high current is injected into the bipolar transistor and a method of fabricating the bipolar transistor are described. The bipolar transistor includes a first collector region of a first conductive type having high impurity concentration, a second collector region of a first conductive type which has high impurity concentration and is formed on the first collector region, a base region of a second conductive type being formed a predetermined portion of the second collector region, and an emitter region of a first conductive type being formed in the base region. The bipolar transistor further includes the third collector region, which has higher impurity concentration than the second collector region, at the bottom of the base region. Therefore, it is possible to prevent the base region from extending toward the second collector region due to the third collector region when a high current is injected into the bipolar transistor, thereby improving the capability of driving a current of the bipolar transistor and preventing the occurrence of Kirk effect even during the injection of a high current.

摘要翻译： 描述了当高电流注入双极晶体管时抑制Kirk效应的发生的双极晶体管和制造双极晶体管的方法。 双极晶体管包括具有高杂质浓度的第一导电类型的第一集电极区域，具有高杂质浓度并形成在第一集电极区域上的第一导电类型的第二集电极区域，第二导电类型的基极区域是 形成第二集电极区域的预定部分，并且在基极区域中形成第一导电类型的发射极区域。 双极晶体管还包括在基极区底部具有比第二集电极区域更高的杂质浓度的第三集电极区域。 因此，当高电流注入双极晶体管时，可以防止基极区域由于第三集电极区域而朝向第二集电极区域延伸，从而提高驱动双极晶体管的电流并防止发生的能力 柯克效应甚至在注入高电流时。