公开(公告)号：US6008523A

公开(公告)日：1999-12-28

申请号：US140573

申请日：1998-08-26

申请人： Chandrasekhar Narayan ,  Axel Brintzinger ,  Gabriel Daniel ,  Fred Einspruch

发明人： Chandrasekhar Narayan ,  Axel Brintzinger ,  Gabriel Daniel ,  Fred Einspruch

IPC分类号： H01L21/82 ,  G11C29/04 ,  H01L21/8242 ,  H01L23/525 ,  H01L27/00 ,  H01L27/108 ,  H01L29/00

CPC分类号： H01L23/5256 ,  H01L2924/0002

摘要： A semiconductor device includes an array of electrical fuses having a structure which permits tight fuse pitches while enabling electrical fusing at voltages of about 10 volts or less. The fuses are useful to replace defective components of the device and/or to permit custom wiring. The semiconductor device includes a substrate with a tight pitch array of fuses including a plurality of fuse links of selective cross sectional area in closely adjacent arrangement, each connected at one end to an individual connector terminal of larger cross sectional area than that of the fuse link, and at another end to a common connector terminal of larger cross sectional area than that of the individual connector terminals. The common connector terminal is typically held at a less positive potential than one of the individual connector terminals during the time a fuse link thereat is to be opened such that electron flow is in a direction from the common connector terminal to the fuse link. The common connector terminal cross sectional area is desirably about 2 or more times that of the individual fuse links to enable electrical fusing at voltages of about 10 volts or less.

摘要翻译： 半导体器件包括电熔丝阵列，其具有允许紧密的熔断器间距的结构，同时在约10伏或更小的电压下实现电熔断。 保险丝可用于更换设备的有缺陷的部件和/或允许定制接线。 半导体器件包括具有紧密间距阵列的保险丝的衬底，其包括紧密相邻布置的选择性横截面积的多个熔丝链，每个熔断体的一端连接到具有比熔丝链的横截面积大的截面面积的单个连接器端子 并且在另一端连接到具有比各个连接器端子更大横截面积的公共连接器端子。 通常，连接器端子通常保持在比其中一个单独的连接器端子更小的正电位，在其中的熔断体将被打开，使得电子流在从公共连接器端子到熔丝链的方向上。 共同的连接器端子横截面积理想的是大约是单个熔断体的2倍或更多倍，以使得能够在约10伏或更小的电压下进行电熔断。