公开(公告)号：US12132448B2

公开(公告)日：2024-10-29

申请号：US17372569

申请日：2021-07-12

申请人： Chang Gung University

发明人： Cher-Ming Tan ,  Vimal Kant Pandey

IPC分类号： H03F1/10 ,  G01T1/17 ,  H01L29/20 ,  H03F3/193

CPC分类号： H03F1/10 ,  G01T1/17 ,  H01L29/2003 ,  H03F3/193 ,  H03F2200/451

摘要： The present invention relates to a gallium nitride transimpedance amplifier, as an essential electronic circuit in the proton beam therapy. Because gallium nitride is more tolerant to the secondary radiation generated during the proton beam therapy, it has high reliability and increases the reliability of the overall system.

公开(公告)号：US12028031B2

公开(公告)日：2024-07-02

申请号：US17503467

申请日：2021-10-18

申请人： Chang Gung University

发明人： Cher-Ming Tan ,  Vimal Kant Pandey

IPC分类号： H03F3/45

CPC分类号： H03F3/45076

摘要： The present invention is gallium nitride based operational amplifier because reliability and performance of the gallium nitride is better than the silicon counterpart in radiation environment. The operational amplifier includes four stages, first stage is dual input balanced output differential amplifier, second stage is dual input unbalanced differential amplifier, third stage is buffer stage to couple second and fourth stage, and fourth stage is cascaded common source amplifier with degeneration. A capacitor coupled between second and third stage is to enhance the stability of operational amplifier.