公开(公告)号：US06768670B2

公开(公告)日：2004-07-27

申请号：US10316662

申请日：2002-12-11

申请人： Chang Shuk Kim ,  Hee Bok Kang ,  Christine H. Kyung ,  In Woo Jang

发明人： Chang Shuk Kim ,  Hee Bok Kang ,  Christine H. Kyung ,  In Woo Jang

IPC分类号： G11C1158

CPC分类号： G11C11/16

摘要： A writing method for a magnetic random access memory (MRAM) using a bipolar junction transistor is disclosed. The writing method is for use with the MRAM using the bipolar junction transistor including: a semiconductor substrate serving as a base of the bipolar junction transistor; an emitter and a collector of the bipolar junction transistor formed in an active region of the semiconductor substrate; an MTJ cell positioned in the active region between the emitter and the collector, separately from the emitter and the collector by a predetermined distance; a word line formed on the MTJ cell; a bit line connected to the collector; and a reference voltage line connected to the emitter. The writing method for the MRAM using the bipolar junction transistor writes data by applying current from the emitter to the collector, and changing a magnetization direction of a free ferromagnetic layer of the MTJ cell by a magnetic field generated due to the current. The magnetization direction can be varied in a shorter distance than a distance between the MTJ cell and the bit line, thereby reducing current consumption. It is thus possible to improve a property and reliability of the semiconductor device.

摘要翻译： 公开了一种使用双极结型晶体管的磁性随机存取存储器（MRAM）的写入方法。 写入方法用于使用双极结型晶体管的MRAM，包括：用作双极结型晶体管的基极的半导体衬底; 形成在所述半导体衬底的有源区中的所述双极结型晶体管的发射极和集电极; 位于发射极和集电极之间的有源区域中的MTJ单元与发射极和集电极分开预定距离; 在MTJ单元上形成的字线; 与收集器连接的位线; 以及连接到发射极的参考电压线。 使用双极结晶体的MRAM的写入方法通过从发射极施加电流到集电极来写入数据，并且通过由电流产生的磁场来改变MTJ电池的自由铁磁层的磁化方向。 磁化方向可以在比MTJ单元和位线之间的距离更短的距离内变化，从而减少电流消耗。 因此可以提高半导体器件的性能和可靠性。