公开(公告)号：US06768670B2

公开(公告)日：2004-07-27

申请号：US10316662

申请日：2002-12-11

申请人： Chang Shuk Kim ,  Hee Bok Kang ,  Christine H. Kyung ,  In Woo Jang

发明人： Chang Shuk Kim ,  Hee Bok Kang ,  Christine H. Kyung ,  In Woo Jang

IPC分类号： G11C1158

CPC分类号： G11C11/16

摘要： A writing method for a magnetic random access memory (MRAM) using a bipolar junction transistor is disclosed. The writing method is for use with the MRAM using the bipolar junction transistor including: a semiconductor substrate serving as a base of the bipolar junction transistor; an emitter and a collector of the bipolar junction transistor formed in an active region of the semiconductor substrate; an MTJ cell positioned in the active region between the emitter and the collector, separately from the emitter and the collector by a predetermined distance; a word line formed on the MTJ cell; a bit line connected to the collector; and a reference voltage line connected to the emitter. The writing method for the MRAM using the bipolar junction transistor writes data by applying current from the emitter to the collector, and changing a magnetization direction of a free ferromagnetic layer of the MTJ cell by a magnetic field generated due to the current. The magnetization direction can be varied in a shorter distance than a distance between the MTJ cell and the bit line, thereby reducing current consumption. It is thus possible to improve a property and reliability of the semiconductor device.

摘要翻译： 公开了一种使用双极结型晶体管的磁性随机存取存储器（MRAM）的写入方法。 写入方法用于使用双极结型晶体管的MRAM，包括：用作双极结型晶体管的基极的半导体衬底; 形成在所述半导体衬底的有源区中的所述双极结型晶体管的发射极和集电极; 位于发射极和集电极之间的有源区域中的MTJ单元与发射极和集电极分开预定距离; 在MTJ单元上形成的字线; 与收集器连接的位线; 以及连接到发射极的参考电压线。 使用双极结晶体的MRAM的写入方法通过从发射极施加电流到集电极来写入数据，并且通过由电流产生的磁场来改变MTJ电池的自由铁磁层的磁化方向。 磁化方向可以在比MTJ单元和位线之间的距离更短的距离内变化，从而减少电流消耗。 因此可以提高半导体器件的性能和可靠性。

公开(公告)号：US07031186B2

公开(公告)日：2006-04-18

申请号：US10651027

申请日：2003-08-29

申请人： Hee Bok Kang ,  Dong Yun Jeong ,  Jae Hyoung Lim ,  Young Jin Park ,  Kye Nam Lee ,  In Woo Jang ,  Seaung Suk Lee ,  Chang Shuk Kim

发明人： Hee Bok Kang ,  Dong Yun Jeong ,  Jae Hyoung Lim ,  Young Jin Park ,  Kye Nam Lee ,  In Woo Jang ,  Seaung Suk Lee ,  Chang Shuk Kim

IPC分类号： G11C11/15

CPC分类号： G01N27/76 ,  G01N33/49 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/1653 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1693 ,  H01F10/325

摘要： A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline). Ingredients of adjacent materials are separated based on electrical characteristics of ingredients by sensing magnetic susceptibility and dielectric constant depending on the sizes of the ingredients.

公开(公告)号：US07333361B2

公开(公告)日：2008-02-19

申请号：US11357214

申请日：2006-02-21

申请人： Hee Bok Kang ,  Dong Yun Jeong ,  Jae Hyoung Lim ,  Young Jin Park ,  Kye Nam Lee ,  In Woo Jang ,  Seaung Suk Lee ,  Chang Shuk Kim

发明人： Hee Bok Kang ,  Dong Yun Jeong ,  Jae Hyoung Lim ,  Young Jin Park ,  Kye Nam Lee ,  In Woo Jang ,  Seaung Suk Lee ,  Chang Shuk Kim

IPC分类号： G11C11/15

CPC分类号： G01N27/76 ,  G01N33/49 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/1653 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1693 ,  H01F10/325

摘要： A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline). Ingredients of adjacent materials are separated based on electrical characteristics of ingredients by sensing magnetic susceptibility and dielectric constant depending on the sizes of the ingredients.

摘要翻译： 公开了一种使用生物传感器的生物传感器和感测单元阵列。 分析包含多种不同成分的相邻材料，以基于它们的磁化率或介电常数确定成分。 感测单元阵列包括诸如包括MTJ（磁隧道结）或GMR（巨磁阻）装置的磁化对检测传感器，包括MTJ装置和磁性材料（电流线）的磁阻传感器），介电常数传感器包括 感测电容器和开关装置，包括MTJ或GMR装置的磁化空穴检测传感器，电流线，自由铁磁层和开关装置，以及包括GMR装置，开关装置和磁性材料的巨磁阻传感器 或强迫字线）。 根据成分的尺寸，通过感应磁化率和介电常数，根据成分的电学特性分离相邻材料的成分。

公开(公告)号：US08174879B2

公开(公告)日：2012-05-08

申请号：US12606015

申请日：2009-10-26

申请人： Hee Bok Kang ,  Dong Yun Jeong ,  Jae Hyoung Lim ,  Young Jin Park ,  Kye Nam Lee ,  In Woo Jang ,  Seaung Suk Lee ,  Chang Shuk Kim

发明人： Hee Bok Kang ,  Dong Yun Jeong ,  Jae Hyoung Lim ,  Young Jin Park ,  Kye Nam Lee ,  In Woo Jang ,  Seaung Suk Lee ,  Chang Shuk Kim

IPC分类号： G11C11/15

CPC分类号： G01N27/76 ,  G01N33/49 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/1653 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1693 ,  H01F10/325

摘要： A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline). Ingredients of adjacent materials are separated based on electrical characteristics of ingredients by sensing magnetic susceptibility and dielectric constant depending on the sizes of the ingredients.

摘要翻译： 公开了一种使用生物传感器的生物传感器和感测单元阵列。 分析包含多种不同成分的相邻材料，以基于它们的磁化率或介电常数确定成分。 感测单元阵列包括诸如包括MTJ（磁隧道结）或GMR（巨磁阻）装置的磁化对检测传感器，包括MTJ装置和磁性材料（电流线）的磁阻传感器），介电常数传感器包括 感测电容器和开关装置，包括MTJ或GMR装置的磁化空穴检测传感器，电流线，自由铁磁层和开关装置，以及包括GMR装置，开关装置和磁性材料的巨磁阻传感器 或强迫字线）。 根据成分的尺寸，通过感应磁化率和介电常数，根据成分的电气特性分离相邻材料的成分。

公开(公告)号：US07609547B2

公开(公告)日：2009-10-27

申请号：US11963614

申请日：2007-12-21

申请人： Hee Bok Kang ,  Dong Yun Jeong ,  Jae Hyoung Lim ,  Young Jin Park ,  Kye Nam Lee ,  In Woo Jang ,  Seaung Suk Lee ,  Chang Shuk Kim

发明人： Hee Bok Kang ,  Dong Yun Jeong ,  Jae Hyoung Lim ,  Young Jin Park ,  Kye Nam Lee ,  In Woo Jang ,  Seaung Suk Lee ,  Chang Shuk Kim

IPC分类号： G11C11/15

CPC分类号： G01N27/76 ,  G01N33/49 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/1653 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1693 ,  H01F10/325

摘要： A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline). Ingredients of adjacent materials are separated based on electrical characteristics of ingredients by sensing magnetic susceptibility and dielectric constant depending on the sizes of the ingredients.

摘要翻译： 公开了一种使用生物传感器的生物传感器和感测单元阵列。 分析包含多种不同成分的相邻材料，以基于它们的磁化率或介电常数确定成分。 感测单元阵列包括诸如包括MTJ（磁隧道结）或GMR（巨磁阻）装置的磁化对检测传感器，包括MTJ装置和磁性材料（电流线）的磁阻传感器），介电常数传感器包括 感测电容器和开关装置，包括MTJ或GMR装置的磁化空穴检测传感器，电流线，自由铁磁层和开关装置，以及包括GMR装置，开关装置和磁性材料的巨磁阻传感器 或强迫字线）。 根据成分的尺寸，通过感应磁化率和介电常数，根据成分的电学特性分离相邻材料的成分。

公开(公告)号：US06664579B2

公开(公告)日：2003-12-16

申请号：US10139890

申请日：2002-05-06

申请人： Chang Shuk Kim ,  Hee Bok Kang ,  Sun Ghil Lee

发明人： Chang Shuk Kim ,  Hee Bok Kang ,  Sun Ghil Lee

IPC分类号： H01L2976

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/5607

摘要： A magnetic random access memory (MRAM) having an MTJ cell located between a word line and a gate oxide film, a reference voltage line in a source junction region, and a connection line in a drain junction region. The constitution and fabrication process of the MRAM are simplified to improve productivity and properties of the device.

摘要翻译： 具有位于字线和栅极氧化膜之间的MTJ单元的磁性随机存取存储器（MRAM），源极结区域中的参考电压线以及漏极结区域中的连接线。 简化MRAM的结构和制造过程，以提高设备的生产率和性能。

公开(公告)号：US06657270B2

公开(公告)日：2003-12-02

申请号：US10127364

申请日：2002-04-22

申请人： Chang Shuk Kim ,  Hee Bok Kang ,  Sun Ghil Lee

发明人： Chang Shuk Kim ,  Hee Bok Kang ,  Sun Ghil Lee

IPC分类号： H01L2982

CPC分类号： H01L27/226 ,  B82Y10/00 ,  G11C11/16 ,  G11C11/5607

摘要： A magnetic random access memory (MRAM) is disclosed. The MRAM may include a semiconductor substrate serving as a base of a bipolar junction transistor; an emitter and a collector of the bipolar junction transistor provided at an active region of the semiconductor substrate; an MTJ cell positioned at the active region between the emitter and the collector, separately from the emitter and the collector by a predetermined distance; and a word line provided on the MTJ cell. The MRAM may also include a bit line contacting the collector; and a reference voltage line contacting the emitter. As a result, the constitution and fabrication process of the MRAM are simplified to improve productivity and properties of the device.

摘要翻译： 公开了一种磁性随机存取存储器（MRAM）。 MRAM可以包括用作双极结晶体管的基极的半导体衬底; 设置在半导体衬底的有源区的双极结型晶体管的发射极和集电极; 位于发射极和集电极之间的有源区域的MTJ单元与发射极和集电极分开预定距离; 和在MTJ单元上提供的字线。 MRAM还可以包括接收收集器的位线; 以及与发射极接触的参考电压线。 结果，简化了MRAM的结构和制造过程，以提高设备的生产率和性能。

公开(公告)号：US08467223B2

公开(公告)日：2013-06-18

申请号：US13204557

申请日：2011-08-05

申请人： Hee Bok Kang

发明人： Hee Bok Kang

IPC分类号： G11C11/22

CPC分类号： H01L21/28291 ,  H01L27/1159 ,  H01L29/516 ,  H01L29/6684

摘要： A non-volatile memory device and a method for forming the same are disclosed, which relate to a ferroelectric memory device having non-volatile characteristics. The non-volatile memory device includes a control gate configured to receive a read voltage, an insulation film formed over the control gate, a metal layer formed over the insulation film, configured to include a channel region, and a drain region and source region at both ends of the channel region, a ferroelectric layer formed over the channel region of the metal layer, and a program and read gate formed over the ferroelectric layer. A write operation of data corresponding to a resistance state of the channel region is performed by changing polarity of the ferroelectric layer in response to a voltage applied to the program and read gate, the drain and source regions, and the control gate. A read operation of data is performed by sensing a current value changing with a polarity state of the ferroelectric layer on the condition that the read voltage is input to the control gate and a sensing bias voltage is input to one of the drain region and the source region.

摘要翻译： 公开了一种非易失性存储器件及其形成方法，涉及具有非易失性特性的铁电存储器件。 非易失性存储器件包括配置为接收读取电压的控制栅极，在控制栅极上形成的绝缘膜，形成在绝缘膜上的金属层，被配置为包括沟道区域，以及漏极区域和源极区域 沟道区的两端，形成在金属层的沟道区上的铁电层，以及形成在铁电层上的程序和读取栅。 对应于通道区域的电阻状态的数据的写入操作通过响应于施加到程序和读取栅极，漏极和源极区域以及控制栅极的电压来改变铁电层的极性来进行。 数据的读取操作是通过在读取电压被输入到控制栅极的条件下检测以铁电层的极性状态变化的电流值，并且感测偏置电压被输入到漏极区域和源极之一 地区。

公开(公告)号：US08243505B2

公开(公告)日：2012-08-14

申请号：US12134527

申请日：2008-06-06

申请人： Hee Bok Kang ,  Suk Kyoung Hong

发明人： Hee Bok Kang ,  Suk Kyoung Hong

IPC分类号： G11C11/00

CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C2013/009 ,  G11C2213/72

摘要： A phase change memory device includes a phase change resistance cell configured to sense a crystallization state that changes in response to a current so that data corresponding to the crystallization state can be stored in the phase change resistance cell. A write driving control signal generating unit outputs a write enable signal and a precharge enable signal in response to a write control signal that corresponds to a heating period and a quenching period of the write data. A write driving unit is configured to supply a driving voltage corresponding to the write data to the phase change resistance cell in response to the write enable signal and the precharge enable signal.

摘要翻译： 相变存储器件包括相变电阻单元，其被配置为感测响应于电流而改变的结晶状态，使得对应于结晶状态的数据可以存储在相变电阻单元中。 写入驱动控制信号生成单元响应于对应于写入数据的加热周期和淬灭周期的写入控制信号，输出写入使能信号和预充电使能信号。 写入驱动单元被配置为响应于写入使能信号和预充电使能信号，将与写入数据相对应的驱动电压提供给相变电阻单元。

公开(公告)号：US20110127644A1

公开(公告)日：2011-06-02

申请号：US12792421

申请日：2010-06-02

申请人： Hee Bok Kang ,  Young Wug Kim ,  Si Choon Yeom

发明人： Hee Bok Kang ,  Young Wug Kim ,  Si Choon Yeom

IPC分类号： H01L23/544 ,  H01L21/50 ,  H01L21/71

CPC分类号： H01L23/544 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68354 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5448 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/00

摘要： A wafer and a method for forming the same are disclosed. The wafer forming method can separate respective chips from others by performing a Deep Reactive Ion Etching (DRIE) process on a wafer including a plurality of chips. The wafer includes a plurality of chips configured to be arranged in row and column directions on the wafer, a scribe region configured to be formed among the plurality of chips so as to separate each chip, and an alignment key pattern configured to be arranged on the plurality of chips.

摘要翻译： 公开了一种晶片及其形成方法。 晶片形成方法可以通过在包括多个芯片的晶片上执行深反应离子蚀刻（DRIE）工艺来分离各个芯片。 晶片包括多个芯片，其被配置为沿着晶圆上的列和列方向布置，划分区域，被配置为形成在所述多个芯片之间以分离每个芯片;以及对准键图案，配置为布置在所述芯片上 多个芯片。