公开(公告)号：US07622742B2

公开(公告)日：2009-11-24

申请号：US10562738

申请日：2004-07-02

申请人： Chang-Tae Kim ,  Keuk Kim ,  Soo-Kun Jeon ,  Pil-Guk Jang ,  Jong-Won Kim

发明人： Chang-Tae Kim ,  Keuk Kim ,  Soo-Kun Jeon ,  Pil-Guk Jang ,  Jong-Won Kim

IPC分类号： H01L27/15 ,  H01S5/00 ,  H01L21/311

CPC分类号： H01L33/22 ,  H01L33/20 ,  H01L33/32

摘要： The present invention relates to a III-nitride semiconductor light-emitting device having high external quantum efficiency, provides a III-nitride compound semiconductor light-emitting device including an active layer generating light by recombination of electrons and holes and containing gallium and nitrogen, an n-type Al(x)ln(y)Ga(1-x-y)N layer epitaxially grown before the active layer is grown, and an n-type electrode electrically contacting with the n-type Al(x)ln(y)Ga(1-x-y)N layer, in which the n-type Al(x)ln(y)Ga(1-x-y)N layer has a surface which is exposed by etching and includes a region for scribing and breaking the device and a region for contact with the n-type electrode, and the surface of the region for scribing and breaking the device is roughened, thereby it is possible to increase external quantum efficiency of the light-emitting device.

摘要翻译： 本发明涉及具有高外量子效率的III族氮化物半导体发光器件，提供了一种III族氮化物化合物半导体发光器件，其包括通过电子和空穴的复合产生光并含有镓和氮的有源层， 在有源层生长之前外延生长的n型Al（x）ln（y）Ga（1-xy）N层，和n型Al（x）ln（y）Ga （1-xy）N层，其中n型Al（x）ln（y）Ga（1-xy）N层具有通过蚀刻暴露的表面，并且包括用于划线和断裂器件的区域，以及 用于与n型电极接触的区域，并且用于划线和断裂器件的区域的表面被粗糙化，从而可以增加发光器件的外部量子效率。

公开(公告)号：US20070114511A1

公开(公告)日：2007-05-24

申请号：US10562738

申请日：2004-07-02

申请人： Chang-Tae Kim ,  Keuk Kim ,  Soo-Kun Jeon ,  Pil-Guk Jang ,  Jong-Won Kim

发明人： Chang-Tae Kim ,  Keuk Kim ,  Soo-Kun Jeon ,  Pil-Guk Jang ,  Jong-Won Kim

IPC分类号： H01L29/06

CPC分类号： H01L33/22 ,  H01L33/20 ,  H01L33/32

摘要： The present invention relates to a HI-nitride semiconductor light-emitting device having high external quantum efficiency, provides a HI-nitride compound semiconductor light-emitting device including an active layer generating light by recombination of electrons and holes and containing gallium and nitrogen, an n-type Al(x)ln(y)Ga(1-x-y)N layer epitaxially grown before the active layer is grown, and an n-type electrode electrically contacting with the n-type Al(x)ln(y)Ga(1x-y)N layer, in which the n-type Al(x)ln(y)Ga(1-x-y)N layer has a surface which is exposed by etching and includes a region for scribing and breaking the device and a region for contact with the n-type electrode, and the surface of the region for scribing and breaking the device is rough-ened, thereby it is possible to increase external quantum efficiency of the light-emitting device.

摘要翻译： 本发明涉及具有高外部量子效率的III族氮化物半导体发光器件，其提供了包括通过电子和空穴的复合产生并含有镓和氮的光而产生光的有源层的III族氮化物化合物半导体发光器件， 在有源层生长之前外延生长的n型Al（x）ln（y）Ga（1-xy）N层，和n型Al（x）ln（y）Ga （1-y）N层，其中n型Al（x）ln（y）Ga（1-xy）N层具有通过蚀刻暴露的表面，并且包括用于划线和断开器件的区域和 用于与n型电极接触的区域，并且用于划线和断开器件的区域的表面粗糙，从而可以增加发光器件的外部量子效率。