公开(公告)号：US11894850B1

公开(公告)日：2024-02-06

申请号：US18180018

申请日：2023-03-07

申请人： ChangXin Memory Technologies, Inc.

发明人： Xinxin Zhang ,  Jianyong Qin

IPC分类号： H03K5/00 ,  H03K5/01 ,  G05F1/567

CPC分类号： H03K5/01 ,  G05F1/567 ,  H03K2005/00019

摘要： The present disclosure provides a delay circuit and a semiconductor device. The delay circuit includes a delay unit and a linear voltage regulator unit; wherein, the delay unit includes an inverting unit and a power supply control unit, and the inverting unit includes an inverting unit and a power supply control unit. The inversion unit receives an input signal and delays the input signal, and the power supply control unit is used for providing a voltage to the inverting unit according to the power supply control signal; the linear voltage stabilization unit is coupled to the delay unit and outputting the power supply control signal according to a reference voltage. The voltage outputs the power control signal. The present disclosure can accurately control the delay time of the delay unit and improve the delay precision of the delay circuit.