公开(公告)号：US20090165713A1

公开(公告)日：2009-07-02

申请号：US12259709

申请日：2008-10-28

申请人： Changsung Sean KIM ,  Sam Duk YOO ,  Jong Pa HONG ,  Ji Hye SHIM ,  Won Shin LEE

发明人： Changsung Sean KIM ,  Sam Duk YOO ,  Jong Pa HONG ,  Ji Hye SHIM ,  Won Shin LEE

IPC分类号： C23C16/54

CPC分类号： C23C16/45508 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45574 ,  C23C16/4558 ,  C23C16/45582 ,  C23C16/45591 ,  C23C16/4584

摘要： Provided is a chemical vapor deposition apparatus. The apparatus includes a reaction chamber, a gas introduction unit, and a gas exhaust unit. The reaction chamber includes a susceptor on which a wafer is loaded and a reaction furnace in which the wafer is processed by chemical vapor deposition. The gas introduction unit is disposed at an outer wall of the reaction chamber to supply reaction gas from an outside of the reaction furnace to a center portion of the reaction furnace. The gas exhaust unit is disposed at a center portion of the reaction chamber to discharge the reaction gas to an upper or lower outside of the reaction chamber after the reaction gas is used for a reaction in the reaction furnace. Therefore, the gas density inside the chamber can be kept at a substantially uniform state even when process pressure is increased for growing a high-temperature deposition layer.

摘要翻译： 提供了一种化学气相沉积设备。 该装置包括反应室，气体引入单元和排气单元。 反应室包括其上装载有晶片的基座和通过化学气相沉积处理晶片的反应炉。 气体引入单元设置在反应室的外壁处，以将反应气体从反应炉的外部供应到反应炉的中心部分。 在反应气体用于反应炉中的反应之后，排气单元设置在反应室的中心部分，以将反应气体排出到反应室的上部或下部。 因此，即使当生长高温沉积层的工艺压力增加时，室内的气体密度也可以保持在基本均匀的状态。