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    ATOMIC LAYER DEPOSITION APPARATUS
    3.
    发明公开
    ATOMIC LAYER DEPOSITION APPARATUS 审中-公开

    公开(公告)号：US20240018652A1

    公开(公告)日：2024-01-18

    申请号：US18475355

    申请日：2023-09-27

    申请人： BENEQ OY

    发明人： Johannes WESSLIN ,  Pekka SOININEN ,  Jonas ANDERSSON

    IPC分类号： C23C16/455

    CPC分类号： C23C16/45544 ,  C23C16/45561 ,  C23C16/45582 ,  C23C16/45563

    摘要： An atomic layer deposition apparatus having a reaction chamber arranged inside a vacuum chamber and a fixed gas manifold assembly fixedly provided to the atomic layer deposition apparatus and arranged to supply gases from outside the vacuum chamber to the reaction chamber. The reaction chamber is a movable reaction chamber which is arranged movable relative to the vacuum chamber and relative to the fixed gas manifold assembly. The atomic layer deposition apparatus further includes a connection arrangement coupling the movable reaction chamber to the fixed gas manifold assembly. The connection arrangement includes a flexible outer flange assembly surrounding the fixed gas manifold assembly, and a first connection surface connecting to a second connection surface of the reaction chamber.

    METHODS AND APPARATUSES FOR SHOWERHEAD BACKSIDE PARASITIC PLASMA SUPPRESSION IN A SECONDARY PURGE ENABLED ALD SYSTEM
    8.
    发明申请
    METHODS AND APPARATUSES FOR SHOWERHEAD BACKSIDE PARASITIC PLASMA SUPPRESSION IN A SECONDARY PURGE ENABLED ALD SYSTEM 有权
    二次冲洗使用ALD系统中的背景反射等离子体抑制的方法和装置

    公开(公告)号：US20160035566A1

    公开(公告)日：2016-02-04

    申请号：US14447203

    申请日：2014-07-30

    申请人： Lam Research Corporation

    发明人： Adrien LaVoie ,  Hu Kang ,  Purushottam Kumar ,  Shankar Swaminathan ,  Jun Qian ,  Frank Pasquale ,  Chloe Baldasseroni

    IPC分类号： H01L21/02 ,  C23C16/458 ,  C23C16/50 ,  C23C16/455

    CPC分类号： C23C16/50 ,  C23C16/4408 ,  C23C16/45519 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/4558 ,  C23C16/45582 ,  C23C16/52 ,  H01L21/0228 ,  H01L21/02334 ,  H01L21/0257 ,  H01L21/0262

    摘要： Disclosed are methods of depositing films of material on semiconductor substrates employing the use of a secondary purge. The methods may include flowing a film precursor into a processing chamber and adsorbing the film precursor onto a substrate in the processing chamber such that the precursor forms an adsorption-limited layer on the substrate. The methods may further include removing at least some unadsorbed film precursor from the volume surrounding the adsorbed precursor by purging the processing chamber with a primary purge gas, and thereafter reacting adsorbed film precursor while a secondary purge gas is flowed into the processing chamber, resulting in the formation of a film layer on the substrate. The secondary purge gas may include a chemical species having an ionization energy and/or a disassociation energy equal to or greater than that of O2. Also disclosed are apparatuses which implement the foregoing processes.

    摘要翻译： 公开了使用二次吹扫在半导体衬底上沉积材料的方法。 所述方法可以包括将膜前体流入处理室并将膜前体吸附到处理室中的基底上，使得前体在基底上形成吸附限制层。 所述方法可以进一步包括通过用初级净化气体清洗处理室，从包围吸附前体的体积中除去至少一些未吸附的膜前体，然后使二次吹扫气体流入处理室中使吸附的膜前体反应，导致 在基板上形成膜层。 二次吹扫气体可以包括具有等于或大于O2的离子化能和/或解离能的化学物质。 还公开了实现上述处理的装置。

    Apparatus for gaseous vapor deposition
    10.
    发明授权
    Apparatus for gaseous vapor deposition 失效
    气相沉积装置

    公开(公告)号：US08529700B2

    公开(公告)日：2013-09-10

    申请号：US12550832

    申请日：2009-08-31

    申请人： Peter Francis Carcia ,  Richard Dale Kinard ,  Robert Scott McLean ,  Geoffrey Nunes ,  Kirstin H. Shilkitus

    发明人： Peter Francis Carcia ,  Richard Dale Kinard ,  Robert Scott McLean ,  Geoffrey Nunes ,  Kirstin H. Shilkitus

    IPC分类号： C23C16/00

    CPC分类号： C23C16/545 ,  B33Y80/00 ,  B65H18/00 ,  B65H2301/51145 ,  B65H2801/87 ,  C23C16/45506 ,  C23C16/45544 ,  C23C16/45582 ,  C23C16/45591 ,  C23C16/458

    摘要： A vapor deposition apparatus includes an insert within which a material is deposited on the surface of a film. A cassette includes end plates each having a rib that edgewise receive a spiral wrapping of a film at least 300 mm wide. Spaces between turns of the wrapping define a gas flow channel and spaces between adjacent turns of one rib define inlet openings that communicate with the channel. Each rib has a predetermined width dimension, a predetermined average thickness dimension, and a width-to-thickness aspect ratio of at least 2:1. The spacing between end plates is at least 300 mm and is also greater than the film width at deposition temperature. The width dimension of each rib is between about 0.5% to about 2.0% of the end plate spacing. A diverging flow director contacts one end plate to directing gaseous fluid toward the inlet openings in that end plate.

    摘要翻译： 气相沉积设备包括一个插入件，材料沉积在薄膜的表面上。 盒式磁带包括端板，每个端板具有边缘，其沿边缘容纳至少300mm宽的膜的螺旋卷绕。 包裹圈之间的空间限定了气体流动通道，并且一个肋的相邻匝之间的间隔限定了与通道连通的入口开口。 每个肋具有至少2:1的预定宽度尺寸，预定平均厚度尺寸和宽至厚纵横比。 端板之间的间距至少为300mm，并且也大于沉积温度下的膜宽度。 每个肋的宽度尺寸在端板间距的约0.5％至约2.0％之间。 分流导流器接触一个端板以将气态流体引向该端板中的入口开口。