公开(公告)号：US06730605B2

公开(公告)日：2004-05-04

申请号：US09833879

申请日：2001-04-12

申请人： Chantal Arena-Foster ,  Robert F. Foster ,  Joseph T. Hillman ,  Thomas J. Licata ,  Tugrul Yasar

发明人： Chantal Arena-Foster ,  Robert F. Foster ,  Joseph T. Hillman ,  Thomas J. Licata ,  Tugrul Yasar

IPC分类号： C23C1600

CPC分类号： C23C14/046 ,  C23C14/58 ,  C23C14/5846 ,  C23C14/5873 ,  H01L21/76877

摘要： A method to redistribute solid copper deposited by PVD on a wafer topography. The deposited copper is solubilized in a fluid for redistribution. The copper redistribution prevents inherent nonuniformity of the deposited copper film thickness by improving the uniformity of thickness of the copper film on the covered surfaces, such as vertical and bottom surfaces. The method provides the advantages of good adhesion and good grain growth and orientation that are achieved with copper deposited by PVD, and also provides the good step coverage as achieved with copper deposited by CVD.

摘要翻译： 将PVD沉积的固体铜重新分布在晶片形貌上的方法。 沉积的铜溶解在流体中用于再分配。 铜再分布通过改善被覆表面上的铜膜的厚度的均匀性（例如垂直和底表面）来防止沉积的铜膜厚度的固有不均匀性。 该方法提供了通过PVD沉积的铜实现的良好的粘附性和良好的晶粒生长和取向的优点，并且还提供了通过CVD沉积的铜实现的良好的阶跃覆盖。

公开(公告)号：US20050008980A1

公开(公告)日：2005-01-13

申请号：US10911085

申请日：2004-08-03

申请人： Chantal Arena-Foster ,  Allan Awtrey ,  Nicholas Ryza ,  Paul Schilling

发明人： Chantal Arena-Foster ,  Allan Awtrey ,  Nicholas Ryza ,  Paul Schilling

IPC分类号： B05D3/02 ,  G03C5/26 ,  G03F7/30

CPC分类号： B05D3/02 ,  G03C5/26 ,  G03F7/30

摘要： A method of developing a polymeric film without the need for a water rinse step. An object having a surface supporting a polymeric film is placed onto a support region within a pressure chamber. A fluid and developer is introduced into the pressure chamber and the object is processed at supercritical conditions to develop the polymeric film such that the polymeric film is not substantially deformed. The pressure chamber is then vented.

公开(公告)号：US06440494B1

公开(公告)日：2002-08-27

申请号：US09543175

申请日：2000-04-05

申请人： Chantal Arena-Foster

发明人： Chantal Arena-Foster

IPC分类号： C23C1618

CPC分类号： C23C16/18 ,  C23C16/4488

摘要： An in-situ method for synthesis of a vapor type of copper or other metal precursor from a solid source of metal in an oxidation state of 1 or greater The solid source is localized above the wafer and its temperature is controlled independently from the wafer temperature. The solid source may be located, for example, in a showerhead. A metal precursor vapor is produced, and this vapor is drawn onto the wafer, allowing deposition to occur on the wafer and a solid thin metal film to form on the wafer. The invention overcomes the problem of low partial pressure of copper precursors in copper CVD.

摘要翻译： 用于从1或更大的氧化态的金属的固体源合成蒸气型铜或其它金属前体的原位方法固体源定位在晶片上方，其温度独立于晶片温度进行控制。 固体源可以位于例如喷头中。 产生金属前体蒸汽，并将该蒸汽吸引到晶片上，从而允许在晶片上发生沉积并在晶片上形成固体金属薄膜。 本发明克服了铜CVD中铜前驱体的低分压问题。