公开(公告)号：US20070015324A1

公开(公告)日：2007-01-18

申请号：US11217369

申请日：2005-09-02

申请人： Chao-Hsi Chung ,  Chu-Chun Hu ,  Chih-Cheng Wang

发明人： Chao-Hsi Chung ,  Chu-Chun Hu ,  Chih-Cheng Wang

IPC分类号： H01L21/8234 ,  H01L21/336

CPC分类号： H01L21/823468 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/78

摘要： A fabrication method for a semiconductor device is provided. A substrate has an array area with a first gate and a peripheral area with a second gate. First and second isolation layers made of different materials are sequentially formed to cover the first gate, the second gate and the substrate. A portion of the second isolation layer is removed to form spacers on sidewalls of the first and second gates and expose the first isolation layer on a top of the first gate, a top of the second gate, and a surface of the substrate. The spacers on the first isolation layer in the array area are removed. The first isolation layer on the top of the first gate and the surface of the substrate is removed, thereby leaving a portion of the first isolation layer covering on the sidewalls of the first gate.

摘要翻译： 提供了半导体器件的制造方法。 衬底具有带有第一栅极的阵列区域和具有第二栅极的周边区域。 依次形成由不同材料制成的第一和第二隔离层以覆盖第一栅极，第二栅极和衬底。 去除第二隔离层的一部分以在第一和第二栅极的侧壁上形成间隔物，并且在第一栅极的顶部，第二栅极的顶部和衬底的表面上暴露第一隔离层。 去除阵列区域中第一隔离层上的间隔物。 去除第一栅极的顶部上的第一隔离层和衬底的表面，从而使第一隔离层的一部分覆盖在第一栅极的侧壁上。

公开(公告)号：US07354837B2

公开(公告)日：2008-04-08

申请号：US11217369

申请日：2005-09-02

申请人： Chao-Hsi Chung ,  Chu-Chun Hu ,  Chih-Cheng Wang

发明人： Chao-Hsi Chung ,  Chu-Chun Hu ,  Chih-Cheng Wang

IPC分类号： H01L21/336

CPC分类号： H01L21/823468 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/78

摘要： A fabrication method for a semiconductor device is provided. A substrate has an array area with a first gate and a peripheral area with a second gate. First and second isolation layers made of different materials are sequentially formed to cover the first gate, the second gate and the substrate. A portion of the second isolation layer is removed to form spacers on sidewalls of the first and second gates and expose the first isolation layer on a top of the first gate, a top of the second gate, and a surface of the substrate. The spacers on the first isolation layer in the array area are removed. The first isolation layer on the top of the first gate and the surface of the substrate is removed, thereby leaving a portion of the first isolation layer covering on the sidewalls of the first gate.

摘要翻译： 提供了半导体器件的制造方法。 衬底具有带有第一栅极的阵列区域和具有第二栅极的周边区域。 依次形成由不同材料制成的第一和第二隔离层以覆盖第一栅极，第二栅极和衬底。 去除第二隔离层的一部分以在第一和第二栅极的侧壁上形成间隔物，并且在第一栅极的顶部，第二栅极的顶部和衬底的表面上暴露第一隔离层。 去除阵列区域中第一隔离层上的间隔物。 去除第一栅极的顶部上的第一隔离层和衬底的表面，从而使第一隔离层的一部分覆盖在第一栅极的侧壁上。