Optoelectronic integrated circuit
    2.
    发明授权
    Optoelectronic integrated circuit 失效
    光电集成电路

    公开(公告)号:US5115294A

    公开(公告)日:1992-05-19

    申请号:US746308

    申请日:1991-08-14

    摘要: A new MSM photodetector, including a photoabsorbing layer of ternary or quaternary III-V compound semiconductor material, is disclosed. This new photodetector is significant because it exhibits a relatively small dark current and a correspondingly large signal-to-noise ratio. Moreover, the photodetector is readily integrable with electronic integrated circuits and is relatively easy to fabricate.

    摘要翻译: 公开了一种新的MSM光电探测器,其包括三元或四元III-V族化合物半导体材料的光吸收层。 这种新的光电探测器是显着的,因为它具有相对较小的暗电流和相当大的信噪比。 此外,光检测器易于与电子集成电路集成,并且相对容易制造。